Surface analysis of cubic silicon carbide (001)

T. M. Parrill*, Y. W. Chung

*Corresponding author for this work

Research output: Contribution to journalArticle

101 Scopus citations

Abstract

Cubic β-SiC(001) surfaces were cleaned in ultra-high vacuum by heating within a Si atomic flux, allowing contaminant species to desorb while continuously replenishing volatile surface Si. Using this technique, surface compositions ranging from Si-rich to Si-deficient were prepared. Surfaces were subsequently characterized using Auger electron, electron energy loss. X-ray photoelectron, and ultraviolet photoelectron spectroscopies as well as low energy electron diffraction. Data are presented for a range of surface compositions which result in formation of several reconstructions: (3 × 1), c(4 × 2), (2 × 1), c(2 × 2), and (1 × 1). Results are interpreted based on surface models which include ordered arrays of surface Si dimers for Si-rich and Si-terminated surfaces and graphite formation for Si-deficient surfaces.

Original languageEnglish (US)
Pages (from-to)96-112
Number of pages17
JournalSurface Science
Volume243
Issue number1-3
DOIs
StatePublished - Feb 2 1991

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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