Surface effects in layered semiconductors Bi2Se3 and Bi2Te3

S. Urazhdin; D. Bilc; S. D. Mahanti; S. H. Tessmer; Theodora Kyratsi; M. G. Kanatzidis

doi:10.1103/PhysRevB.69.085313

Surface effects in layered semiconductors Bi₂Se₃ and Bi₂Te₃

S. Urazhdin, D. Bilc, S. D. Mahanti, S. H. Tessmer, Theodora Kyratsi, M. G. Kanatzidis

Chemistry

Research output: Contribution to journal › Article › peer-review

121 Scopus citations

Abstract

Scanning tunneling spectroscopy of Bi₂Se₃ and Bi₂Te₃ layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure calculations suggest that the surface effects are responsible for these properties. Conversely, the interlayer coupling has a strong effect on the bulk near-gap electronic structure. These properties may prove to be important for the thermoelectric performance of these and other related chalcogenides.

Original language	English (US)
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.69.085313
State	Published - Jan 1 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.69.085313

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AU - Kyratsi, Theodora

AU - Kanatzidis, M. G.

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AB - Scanning tunneling spectroscopy of Bi2Se3 and Bi2Te3 layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure calculations suggest that the surface effects are responsible for these properties. Conversely, the interlayer coupling has a strong effect on the bulk near-gap electronic structure. These properties may prove to be important for the thermoelectric performance of these and other related chalcogenides.

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Surface effects in layered semiconductors Bi₂Se₃ and Bi₂Te₃

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