Surface electronic properties of polycrystalline bulk and thin film In                          2                         O                         3                         (ZnO)                         k                          compounds

E. Mitchell Hopper; Qimin Zhu; Jürgen Gassmann; Andreas Klein; Thomas O. Mason

doi:10.1016/j.apsusc.2012.10.143

Surface electronic properties of polycrystalline bulk and thin film In ₂ O ₃ (ZnO) _k compounds

E. Mitchell Hopper^*, Qimin Zhu, Jürgen Gassmann, Andreas Klein, Thomas O. Mason

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The surface electronic potentials of In ₂ O ₃ (ZnO) _k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In ₂ O ₃ . The work functions and Fermi levels spanned a range similar to those of the basis oxides In ₂ O ₃ and ZnO, and the ionization potential was similar to that of both In ₂ O ₃ and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.

Original language	English (US)
Pages (from-to)	811-815
Number of pages	5
Journal	Applied Surface Science
Volume	264
DOIs	https://doi.org/10.1016/j.apsusc.2012.10.143
State	Published - Jan 1 2013

Funding

The Northwestern work was primarily supported by the U.S. Department of Energy, Basic Energy Sciences under grant no. DE-FG02-08ER46536 (EMH, TOM); however, the Kelvin Probe work was supported by U.S. Department of Energy, Basic Energy Sciences , as part of an Energy Frontier Research Center (DOE grant no. DE-SC0001059 , QZ, TOM). The Darmstadt work was supported by the Deutsche Forschungsgemeinschaft (DFG) within the collaborative research center SFB 595 (electrical fatigue of functional materials).

Keywords

Indium zinc oxide
Ionization potential
Kelvin probe
Photoelectron spectroscopy
Work function

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

Access to Document

10.1016/j.apsusc.2012.10.143

Cite this

Hopper, E. M., Zhu, Q., Gassmann, J., Klein, A., & Mason, T. O. (2013). Surface electronic properties of polycrystalline bulk and thin film In ₂ O ₃ (ZnO) _k compounds Applied Surface Science, 264, 811-815. https://doi.org/10.1016/j.apsusc.2012.10.143

Hopper, E. Mitchell ; Zhu, Qimin ; Gassmann, Jürgen et al. / Surface electronic properties of polycrystalline bulk and thin film In ₂ O ₃ (ZnO) _k compounds In: Applied Surface Science. 2013 ; Vol. 264. pp. 811-815.

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title = " Surface electronic properties of polycrystalline bulk and thin film In 2 O 3 (ZnO) k compounds ",

abstract = " The surface electronic potentials of In 2 O 3 (ZnO) k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In 2 O 3 . The work functions and Fermi levels spanned a range similar to those of the basis oxides In 2 O 3 and ZnO, and the ionization potential was similar to that of both In 2 O 3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.",

keywords = "Indium zinc oxide, Ionization potential, Kelvin probe, Photoelectron spectroscopy, Work function",

author = "Hopper, {E. Mitchell} and Qimin Zhu and J{\"u}rgen Gassmann and Andreas Klein and Mason, {Thomas O.}",

note = "Funding Information: The Northwestern work was primarily supported by the U.S. Department of Energy, Basic Energy Sciences under grant no. DE-FG02-08ER46536 (EMH, TOM); however, the Kelvin Probe work was supported by U.S. Department of Energy, Basic Energy Sciences , as part of an Energy Frontier Research Center (DOE grant no. DE-SC0001059 , QZ, TOM). The Darmstadt work was supported by the Deutsche Forschungsgemeinschaft (DFG) within the collaborative research center SFB 595 (electrical fatigue of functional materials).",

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doi = "10.1016/j.apsusc.2012.10.143",

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Hopper, EM, Zhu, Q, Gassmann, J, Klein, A & Mason, TO 2013, ' Surface electronic properties of polycrystalline bulk and thin film In ₂ O ₃ (ZnO) _k compounds ', Applied Surface Science, vol. 264, pp. 811-815. https://doi.org/10.1016/j.apsusc.2012.10.143

Surface electronic properties of polycrystalline bulk and thin film In ₂ O ₃ (ZnO) _k compounds . / Hopper, E. Mitchell; Zhu, Qimin; Gassmann, Jürgen et al.
In: Applied Surface Science, Vol. 264, 01.01.2013, p. 811-815.

Research output: Contribution to journal › Article › peer-review

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AU - Hopper, E. Mitchell

AU - Zhu, Qimin

AU - Gassmann, Jürgen

AU - Klein, Andreas

AU - Mason, Thomas O.

N1 - Funding Information: The Northwestern work was primarily supported by the U.S. Department of Energy, Basic Energy Sciences under grant no. DE-FG02-08ER46536 (EMH, TOM); however, the Kelvin Probe work was supported by U.S. Department of Energy, Basic Energy Sciences , as part of an Energy Frontier Research Center (DOE grant no. DE-SC0001059 , QZ, TOM). The Darmstadt work was supported by the Deutsche Forschungsgemeinschaft (DFG) within the collaborative research center SFB 595 (electrical fatigue of functional materials).

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The surface electronic potentials of In 2 O 3 (ZnO) k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In 2 O 3 . The work functions and Fermi levels spanned a range similar to those of the basis oxides In 2 O 3 and ZnO, and the ionization potential was similar to that of both In 2 O 3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.

AB - The surface electronic potentials of In 2 O 3 (ZnO) k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In 2 O 3 . The work functions and Fermi levels spanned a range similar to those of the basis oxides In 2 O 3 and ZnO, and the ionization potential was similar to that of both In 2 O 3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.

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Hopper EM, Zhu Q, Gassmann J, Klein A, Mason TO. Surface electronic properties of polycrystalline bulk and thin film In ₂ O ₃ (ZnO) _k compounds Applied Surface Science. 2013 Jan 1;264:811-815. doi: 10.1016/j.apsusc.2012.10.143