Surface electronic properties of polycrystalline bulk and thin film In 2 O 3 (ZnO) k compounds

E. Mitchell Hopper*, Qimin Zhu, Jürgen Gassmann, Andreas Klein, Thomas O. Mason

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The surface electronic potentials of In 2 O 3 (ZnO) k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In 2 O 3 . The work functions and Fermi levels spanned a range similar to those of the basis oxides In 2 O 3 and ZnO, and the ionization potential was similar to that of both In 2 O 3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.

Original languageEnglish (US)
Pages (from-to)811-815
Number of pages5
JournalApplied Surface Science
StatePublished - Jan 1 2013


  • Indium zinc oxide
  • Ionization potential
  • Kelvin probe
  • Photoelectron spectroscopy
  • Work function

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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