Surface electronic structure of CeN

M. R. Norman*, E. Wimmer, A. J. Freeman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


The first detailed all-electron local-density study of the surface electronic structure of an f-electron compound, CeN(001), is presented using the full-potential linearized-augmented-plane-wave method. Small but significant differences between the surface and bulk predictions are analyzed using recent photoemission data. In particular, attention is addressed to a surface chemical shift of 1 eV for the 4f states in CeN that has been deduced from photoemission experiments. The results of the present study of the CeN(001) surface do not support this picture. Rather, it is suggested that the 4f photoemission peak at 1.2 eV below the Fermi level might be caused by (surface) vacancies in CeN, or by more complicated final-state effects.

Original languageEnglish (US)
Pages (from-to)7830-7834
Number of pages5
JournalPhysical Review B
Issue number12
StatePublished - 1985

ASJC Scopus subject areas

  • Condensed Matter Physics


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