Surface etching kinetics of hydrogen plasma on InP

C. W. Tu; R. P H Chang; A. R. Schlier

doi:10.1063/1.93296

Surface etching kinetics of hydrogen plasma on InP

C. W. Tu^*, R. P H Chang, A. R. Schlier

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The surface etching kinetics of hydrogen plasma on InP have been studied using Auger electron spectroscopy. It is found that the surface hydrocarbon contamination can be removed with a low power density (15 mW cm^-3) of hydrogen plasma. At higher power phosphorus is preferentially removed by the hydrogen atoms in the form of hydrides, leaving the surface rich in In. The excess In is oxidized at high background pressure (∼10^-6 Torr) by residual water vapor. However, at low base pressure (≲10^-7 Torr) the native oxide (∼10 Å) can be etched away.

Original language	English (US)
Pages (from-to)	80-82
Number of pages	3
Journal	Applied Physics Letters
Volume	41
Issue number	1
DOIs	https://doi.org/10.1063/1.93296
State	Published - 1982

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.93296

Cite this

@article{98626f57cb0744f39219c56b010f3e49,

title = "Surface etching kinetics of hydrogen plasma on InP",

abstract = "The surface etching kinetics of hydrogen plasma on InP have been studied using Auger electron spectroscopy. It is found that the surface hydrocarbon contamination can be removed with a low power density (15 mW cm-3) of hydrogen plasma. At higher power phosphorus is preferentially removed by the hydrogen atoms in the form of hydrides, leaving the surface rich in In. The excess In is oxidized at high background pressure (∼10-6 Torr) by residual water vapor. However, at low base pressure (≲10-7 Torr) the native oxide (∼10 {\AA}) can be etched away.",

author = "Tu, {C. W.} and Chang, {R. P H} and Schlier, {A. R.}",

year = "1982",

doi = "10.1063/1.93296",

language = "English (US)",

volume = "41",

pages = "80--82",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Surface etching kinetics of hydrogen plasma on InP

AU - Tu, C. W.

AU - Chang, R. P H

AU - Schlier, A. R.

PY - 1982

Y1 - 1982

N2 - The surface etching kinetics of hydrogen plasma on InP have been studied using Auger electron spectroscopy. It is found that the surface hydrocarbon contamination can be removed with a low power density (15 mW cm-3) of hydrogen plasma. At higher power phosphorus is preferentially removed by the hydrogen atoms in the form of hydrides, leaving the surface rich in In. The excess In is oxidized at high background pressure (∼10-6 Torr) by residual water vapor. However, at low base pressure (≲10-7 Torr) the native oxide (∼10 Å) can be etched away.

AB - The surface etching kinetics of hydrogen plasma on InP have been studied using Auger electron spectroscopy. It is found that the surface hydrocarbon contamination can be removed with a low power density (15 mW cm-3) of hydrogen plasma. At higher power phosphorus is preferentially removed by the hydrogen atoms in the form of hydrides, leaving the surface rich in In. The excess In is oxidized at high background pressure (∼10-6 Torr) by residual water vapor. However, at low base pressure (≲10-7 Torr) the native oxide (∼10 Å) can be etched away.

UR - http://www.scopus.com/inward/record.url?scp=0342824862&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0342824862&partnerID=8YFLogxK

U2 - 10.1063/1.93296

DO - 10.1063/1.93296

M3 - Article

AN - SCOPUS:0342824862

SN - 0003-6951

VL - 41

SP - 80

EP - 82

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Surface etching kinetics of hydrogen plasma on InP

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this