Surface etching kinetics of hydrogen plasma on InP

C. W. Tu*, R. P H Chang, A. R. Schlier

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


The surface etching kinetics of hydrogen plasma on InP have been studied using Auger electron spectroscopy. It is found that the surface hydrocarbon contamination can be removed with a low power density (15 mW cm-3) of hydrogen plasma. At higher power phosphorus is preferentially removed by the hydrogen atoms in the form of hydrides, leaving the surface rich in In. The excess In is oxidized at high background pressure (∼10-6 Torr) by residual water vapor. However, at low base pressure (≲10-7 Torr) the native oxide (∼10 Å) can be etched away.

Original languageEnglish (US)
Pages (from-to)80-82
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 1982

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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