Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors

G. Chen; E. K. Huang; A. M. Hoang; S. Bogdanov; S. R. Darvish; M. Razeghi

doi:10.1063/1.4767905

Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors

G. Chen^*, E. K. Huang, A. M. Hoang, S. Bogdanov, S. R. Darvish, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

By using gating technique, surface leakage generated by SiO₂ passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO₂ passivation layer thickness, the saturated gated bias is reduced to -4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω cm² differential-resistance-area product at -100 mV. With quantum efficiency of 50, the 11μm 50 cut-off gated photodiode has a specific detectivity of 7 × 10¹¹ Jones, and the detectivity stays above 2 × 10¹¹ Jones from 0 to -500 mV operation bias.

Original language	English (US)
Article number	213501
Journal	Applied Physics Letters
Volume	101
Issue number	21
DOIs	https://doi.org/10.1063/1.4767905
State	Published - Nov 19 2012

Funding

The authors acknowledge the support, interest, and encouragement of Dr. Fenner Milton, Dr. Meimei Tidrow, and Dr. Joseph Pellegrino from the U.S. Army Night Vision Laboratory and Dr. William Clark from U.S. Army Research Office.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors",

abstract = "By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to -4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω cm2 differential-resistance-area product at -100 mV. With quantum efficiency of 50, the 11μm 50 cut-off gated photodiode has a specific detectivity of 7 × 1011 Jones, and the detectivity stays above 2 × 1011 Jones from 0 to -500 mV operation bias.",

author = "G. Chen and Huang, {E. K.} and Hoang, {A. M.} and S. Bogdanov and Darvish, {S. R.} and M. Razeghi",

note = "Funding Information: The authors acknowledge the support, interest, and encouragement of Dr. Fenner Milton, Dr. Meimei Tidrow, and Dr. Joseph Pellegrino from the U.S. Army Night Vision Laboratory and Dr. William Clark from U.S. Army Research Office.",

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doi = "10.1063/1.4767905",

language = "English (US)",

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AU - Chen, G.

AU - Huang, E. K.

AU - Hoang, A. M.

AU - Bogdanov, S.

AU - Darvish, S. R.

AU - Razeghi, M.

N1 - Funding Information: The authors acknowledge the support, interest, and encouragement of Dr. Fenner Milton, Dr. Meimei Tidrow, and Dr. Joseph Pellegrino from the U.S. Army Night Vision Laboratory and Dr. William Clark from U.S. Army Research Office.

PY - 2012/11/19

Y1 - 2012/11/19

N2 - By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to -4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω cm2 differential-resistance-area product at -100 mV. With quantum efficiency of 50, the 11μm 50 cut-off gated photodiode has a specific detectivity of 7 × 1011 Jones, and the detectivity stays above 2 × 1011 Jones from 0 to -500 mV operation bias.

AB - By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to -4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω cm2 differential-resistance-area product at -100 mV. With quantum efficiency of 50, the 11μm 50 cut-off gated photodiode has a specific detectivity of 7 × 1011 Jones, and the detectivity stays above 2 × 1011 Jones from 0 to -500 mV operation bias.

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Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors

Abstract

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ASJC Scopus subject areas

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