Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors

G. Chen*, E. K. Huang, A. M. Hoang, S. Bogdanov, S. R. Darvish, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to -4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω cm2 differential-resistance-area product at -100 mV. With quantum efficiency of 50, the 11μm 50 cut-off gated photodiode has a specific detectivity of 7 × 1011 Jones, and the detectivity stays above 2 × 1011 Jones from 0 to -500 mV operation bias.

Original languageEnglish (US)
Article number213501
JournalApplied Physics Letters
Volume101
Issue number21
DOIs
StatePublished - Nov 19 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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