Abstract
Inductively coupled plasma (ICP) dry etching rendered structural and electrical enhancements on type-II antimonide-based superlattices compared to those delineated by electron cyclotron resonance (ECR) with a regenerative chemical wet etch. The surface resistivity of 4× 105 Ω cm is evidence of the surface quality achieved with ICP etching and polyimide passivation. By only modifying the etching technique in the fabrication steps, the ICP-etched devices with a 9.3 μm cutoff wavelength revealed a diffusion-limited dark current density of 4.1× 10-6 A/ cm2 and a maximum differential resistance at zero bias in excess of 5300 Ω cm2 at 77 K, which are an order of magnitude better in comparison to the ECR-etched devices.
Original language | English (US) |
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Article number | 053506 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 5 |
DOIs | |
State | Published - 2009 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)