Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)

Chu Young Cho; Yinjun Zhang; Erdem Cicek; Benjamin Rahnema; Yanbo Bai; Ryan McClintock; Manijeh Razeghi

doi:10.1063/1.4809521

Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)

Chu Young Cho, Yinjun Zhang, Erdem Cicek, Benjamin Rahnema, Yanbo Bai, Ryan McClintock, Manijeh Razeghi

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

We report on the development of surface plasmon (SP) enhanced AlGaN-based multiple quantum wells (MQWs) ultraviolet (UV) light-emitting diodes (LEDs) grown on silicon (111) substrates. In order to generate SP-coupling with the radiating dipoles in MQWs, an aluminum layer is selectively deposited in holes etched in the top p-AlGaN to p-GaN layers. After flip-chip bonding and substrate removal, an optical output power of ∼1.2 mW is achieved at an emission wavelength of 346 nm; the output power of these UV LEDs with Al layer is increased by 45% compared to that of conventional UV LEDs without Al layer. This enhancement can be attributed to an increase in the spontaneous emission rate and improved internal quantum efficiency via resonance coupling between excitons in MQWs and SPs in the aluminum layer.

Original language	English (US)
Article number	211110
Journal	Applied Physics Letters
Volume	102
Issue number	21
DOIs	https://doi.org/10.1063/1.4809521
State	Published - May 27 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4809521

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title = "Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)",

abstract = "We report on the development of surface plasmon (SP) enhanced AlGaN-based multiple quantum wells (MQWs) ultraviolet (UV) light-emitting diodes (LEDs) grown on silicon (111) substrates. In order to generate SP-coupling with the radiating dipoles in MQWs, an aluminum layer is selectively deposited in holes etched in the top p-AlGaN to p-GaN layers. After flip-chip bonding and substrate removal, an optical output power of ∼1.2 mW is achieved at an emission wavelength of 346 nm; the output power of these UV LEDs with Al layer is increased by 45% compared to that of conventional UV LEDs without Al layer. This enhancement can be attributed to an increase in the spontaneous emission rate and improved internal quantum efficiency via resonance coupling between excitons in MQWs and SPs in the aluminum layer.",

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T1 - Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)

AU - Cho, Chu Young

AU - Zhang, Yinjun

AU - Cicek, Erdem

AU - Rahnema, Benjamin

AU - Bai, Yanbo

AU - McClintock, Ryan

AU - Razeghi, Manijeh

PY - 2013/5/27

Y1 - 2013/5/27

N2 - We report on the development of surface plasmon (SP) enhanced AlGaN-based multiple quantum wells (MQWs) ultraviolet (UV) light-emitting diodes (LEDs) grown on silicon (111) substrates. In order to generate SP-coupling with the radiating dipoles in MQWs, an aluminum layer is selectively deposited in holes etched in the top p-AlGaN to p-GaN layers. After flip-chip bonding and substrate removal, an optical output power of ∼1.2 mW is achieved at an emission wavelength of 346 nm; the output power of these UV LEDs with Al layer is increased by 45% compared to that of conventional UV LEDs without Al layer. This enhancement can be attributed to an increase in the spontaneous emission rate and improved internal quantum efficiency via resonance coupling between excitons in MQWs and SPs in the aluminum layer.

AB - We report on the development of surface plasmon (SP) enhanced AlGaN-based multiple quantum wells (MQWs) ultraviolet (UV) light-emitting diodes (LEDs) grown on silicon (111) substrates. In order to generate SP-coupling with the radiating dipoles in MQWs, an aluminum layer is selectively deposited in holes etched in the top p-AlGaN to p-GaN layers. After flip-chip bonding and substrate removal, an optical output power of ∼1.2 mW is achieved at an emission wavelength of 346 nm; the output power of these UV LEDs with Al layer is increased by 45% compared to that of conventional UV LEDs without Al layer. This enhancement can be attributed to an increase in the spontaneous emission rate and improved internal quantum efficiency via resonance coupling between excitons in MQWs and SPs in the aluminum layer.

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Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)

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