Surface roughening by electron beam heating

D. Grozea*, E. Landree, L. D. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The effect of electron beam heating during the preparation of clean silicon surfaces suitable for epitaxial studies in ultrahigh vacuum conditions was investigated using surface chemical characterization techniques and transmission electron microscopy. The electron beam irradiation produced a disordered surface on the incident side of the sample and well-ordered monoatomic steps on the other surface, even at electron energies as low as 3 keV. These results have significant implications for epitaxial thin film growth.

Original languageEnglish (US)
Pages (from-to)2301-2303
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number16
DOIs
StatePublished - Oct 20 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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