Surface science applied to lasers: near-field optical microscpoy

S. K. Buratto; J. W. Hsu; Lisa Dhar; R. B. Byslma; C. C. Bahr; Mark J. Cardillo

Surface science applied to lasers: near-field optical microscpoy

S. K. Buratto^*, J. W. Hsu, Lisa Dhar, R. B. Byslma, C. C. Bahr, Mark J. Cardillo

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Near-field scattering optical microscopy (NSOM) is used to characterize the emission output and to obtain photoconductivity maps of InGaAsP multiple quantum well lasers. The high spatial resolution of NSOM (approximately λ/20) allows detailed imaging of the laser structure. Emission measurements not only provide direct visualization of the laser mode but also reveal unwanted emission due to InP electroluminescence. Near-field photoconductivity experiments yield high resolution measurement of carrier transport throughout the structure yielding valuable information on current leakage, defect formation, and the quality of p-n junctions.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	279-284
Number of pages	6
State	Published - 1995
Externally published	Yes
Event	Laser Techniques for Surface Science II - San Diego, CA, USA Duration: Jul 12 1995 → Jul 14 1995

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2547
ISSN (Print)	0277-786X

Other

Other	Laser Techniques for Surface Science II
City	San Diego, CA, USA
Period	7/12/95 → 7/14/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@inproceedings{4ee21ac6bc6e4ad5bb1c469bee352cd1,

title = "Surface science applied to lasers: near-field optical microscpoy",

abstract = "Near-field scattering optical microscopy (NSOM) is used to characterize the emission output and to obtain photoconductivity maps of InGaAsP multiple quantum well lasers. The high spatial resolution of NSOM (approximately λ/20) allows detailed imaging of the laser structure. Emission measurements not only provide direct visualization of the laser mode but also reveal unwanted emission due to InP electroluminescence. Near-field photoconductivity experiments yield high resolution measurement of carrier transport throughout the structure yielding valuable information on current leakage, defect formation, and the quality of p-n junctions.",

author = "Buratto, {S. K.} and Hsu, {J. W.} and Lisa Dhar and Byslma, {R. B.} and Bahr, {C. C.} and Cardillo, {Mark J.}",

year = "1995",

language = "English (US)",

isbn = "0819419060",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

pages = "279--284",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

Buratto, SK, Hsu, JW, Dhar, L, Byslma, RB, Bahr, CC & Cardillo, MJ 1995, Surface science applied to lasers: near-field optical microscpoy. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2547, pp. 279-284, Laser Techniques for Surface Science II, San Diego, CA, USA, 7/12/95.

Surface science applied to lasers: near-field optical microscpoy. / Buratto, S. K.; Hsu, J. W.; Dhar, Lisa et al.
Proceedings of SPIE - The International Society for Optical Engineering. 1995. p. 279-284 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2547).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Surface science applied to lasers

T2 - Laser Techniques for Surface Science II

AU - Buratto, S. K.

AU - Hsu, J. W.

AU - Dhar, Lisa

AU - Byslma, R. B.

AU - Bahr, C. C.

AU - Cardillo, Mark J.

PY - 1995

Y1 - 1995

N2 - Near-field scattering optical microscopy (NSOM) is used to characterize the emission output and to obtain photoconductivity maps of InGaAsP multiple quantum well lasers. The high spatial resolution of NSOM (approximately λ/20) allows detailed imaging of the laser structure. Emission measurements not only provide direct visualization of the laser mode but also reveal unwanted emission due to InP electroluminescence. Near-field photoconductivity experiments yield high resolution measurement of carrier transport throughout the structure yielding valuable information on current leakage, defect formation, and the quality of p-n junctions.

AB - Near-field scattering optical microscopy (NSOM) is used to characterize the emission output and to obtain photoconductivity maps of InGaAsP multiple quantum well lasers. The high spatial resolution of NSOM (approximately λ/20) allows detailed imaging of the laser structure. Emission measurements not only provide direct visualization of the laser mode but also reveal unwanted emission due to InP electroluminescence. Near-field photoconductivity experiments yield high resolution measurement of carrier transport throughout the structure yielding valuable information on current leakage, defect formation, and the quality of p-n junctions.

UR - http://www.scopus.com/inward/record.url?scp=0029534640&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029534640&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029534640

SN - 0819419060

SN - 9780819419064

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 279

EP - 284

BT - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 12 July 1995 through 14 July 1995

ER -

Surface science applied to lasers: near-field optical microscpoy

Abstract

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ASJC Scopus subject areas

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