Surfactant-mediated epitaxy of metastable SnGe alloys

P. F. Lyman; M. J. Bedzyk

doi:10.1063/1.117101

Surfactant-mediated epitaxy of metastable SnGe alloys

P. F. Lyman, M. J. Bedzyk

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

An effective method for molecular beam epitaxial construction of metastable, pseudomorphic SnGe/Ge(001) heterostructures is presented. This method exploits a surfactant species, Bi, to alter Sn surface-segregation kinetics. Using the x-ray standing wave technique, we demonstrate not only that Bi segregates to the growth surface more strongly than Sn, but that it also dramatically suppresses the segregation mobility of Sn. The limited Sn diffusivity, which is believed to stem from the full coordination of subsurface Sn atoms, allows the epitaxy of well-ordered, metastable SnGe heterostructures.

Original language	English (US)
Pages (from-to)	978-980
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	7
DOIs	https://doi.org/10.1063/1.117101
State	Published - Aug 12 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "An effective method for molecular beam epitaxial construction of metastable, pseudomorphic SnGe/Ge(001) heterostructures is presented. This method exploits a surfactant species, Bi, to alter Sn surface-segregation kinetics. Using the x-ray standing wave technique, we demonstrate not only that Bi segregates to the growth surface more strongly than Sn, but that it also dramatically suppresses the segregation mobility of Sn. The limited Sn diffusivity, which is believed to stem from the full coordination of subsurface Sn atoms, allows the epitaxy of well-ordered, metastable SnGe heterostructures.",

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N2 - An effective method for molecular beam epitaxial construction of metastable, pseudomorphic SnGe/Ge(001) heterostructures is presented. This method exploits a surfactant species, Bi, to alter Sn surface-segregation kinetics. Using the x-ray standing wave technique, we demonstrate not only that Bi segregates to the growth surface more strongly than Sn, but that it also dramatically suppresses the segregation mobility of Sn. The limited Sn diffusivity, which is believed to stem from the full coordination of subsurface Sn atoms, allows the epitaxy of well-ordered, metastable SnGe heterostructures.

AB - An effective method for molecular beam epitaxial construction of metastable, pseudomorphic SnGe/Ge(001) heterostructures is presented. This method exploits a surfactant species, Bi, to alter Sn surface-segregation kinetics. Using the x-ray standing wave technique, we demonstrate not only that Bi segregates to the growth surface more strongly than Sn, but that it also dramatically suppresses the segregation mobility of Sn. The limited Sn diffusivity, which is believed to stem from the full coordination of subsurface Sn atoms, allows the epitaxy of well-ordered, metastable SnGe heterostructures.

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Surfactant-mediated epitaxy of metastable SnGe alloys

Abstract

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