Surfactant templated assembly of hexagonal mesostructured semiconductors based on [Ge4Q10]4- (Q=S, Se) and Pd2+ and Pt2+ ions

Pantelis N. Trikalitis; Krishnaswamy K. Rangan; Mercouri G. Kanatzidis

Surfactant templated assembly of hexagonal mesostructured semiconductors based on [Ge₄Q₁₀]^4- (Q=S, Se) and Pd²⁺ and Pt²⁺ ions

Pantelis N. Trikalitis^*, Krishnaswamy K. Rangan, Mercouri G. Kanatzidis

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Conference article › peer-review

Abstract

Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge₄Q₁₀]^4- (Q=S, Se) clusters with the square planar noble metal cations of Pd²⁺ and Pt²⁺ in the presence of cetylpyridinium surfactant molecules. The use of Pt²⁺ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<E_g<2.5 eV.

Original language	English (US)
Pages (from-to)	125-130
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	707
State	Published - Dec 1 2002
Event	Self-Assembly Processes in Materials - Boston,MA, United States Duration: Nov 26 2001 → Nov 30 2001

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Surfactant templated assembly of hexagonal mesostructured semiconductors based on [Ge4Q10]4- (Q=S, Se) and Pd2+ and Pt2+ ions",

abstract = "Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<Eg<2.5 eV.",

author = "Trikalitis, {Pantelis N.} and Rangan, {Krishnaswamy K.} and Kanatzidis, {Mercouri G.}",

year = "2002",

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language = "English (US)",

volume = "707",

pages = "125--130",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "Self-Assembly Processes in Materials ; Conference date: 26-11-2001 Through 30-11-2001",

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Surfactant templated assembly of hexagonal mesostructured semiconductors based on [Ge₄Q₁₀]^4- (Q=S, Se) and Pd²⁺ and Pt²⁺ ions. / Trikalitis, Pantelis N.; Rangan, Krishnaswamy K.; Kanatzidis, Mercouri G.
In: Materials Research Society Symposium - Proceedings, Vol. 707, 01.12.2002, p. 125-130.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Surfactant templated assembly of hexagonal mesostructured semiconductors based on [Ge4Q10]4- (Q=S, Se) and Pd2+ and Pt2+ ions

AU - Trikalitis, Pantelis N.

AU - Rangan, Krishnaswamy K.

AU - Kanatzidis, Mercouri G.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<Eg<2.5 eV.

AB - Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<Eg<2.5 eV.

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JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Self-Assembly Processes in Materials

Y2 - 26 November 2001 through 30 November 2001

ER -

Surfactant templated assembly of hexagonal mesostructured semiconductors based on [Ge₄Q₁₀]^4- (Q=S, Se) and Pd²⁺ and Pt²⁺ ions

Abstract

ASJC Scopus subject areas

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