Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions

P. Khalili Amiri*, Z. M. Zeng, J. Langer, H. Zhao, G. Rowlands, Y. J. Chen, I. N. Krivorotov, J. P. Wang, H. W. Jiang, J. A. Katine, Y. Huai, K. Galatsis, K. L. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

147 Scopus citations

Abstract

We present in-plane CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current. The tunneling magnetoresistance ratio, resistance-area product, and switching current densities are compared in magnetic tunnel junctions with different CoFeB compositions. The effects of CoFeB free layer thickness on its magnetic anisotropy and current-induced switching characteristics are studied by vibrating sample magnetometry and electrical transport measurements on patterned elliptical nanopillar devices. Switching current densities ∼4 MA/ cm2 are obtained at 10 ns write times.

Original languageEnglish (US)
Article number112507
JournalApplied Physics Letters
Volume98
Issue number11
DOIs
StatePublished - Mar 14 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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