Symmetry of optically active Yb-related centers in InP and In 1-xGaxP (x≤0.13)

I. A. Buyanova; A. J. Neuhalfen; B. W. Wessels; M. K. Sheinkman

doi:10.1063/1.357843

Symmetry of optically active Yb-related centers in InP and In _1-xGa_xP (x≤0.13)

I. A. Buyanova^*, A. J. Neuhalfen, B. W. Wessels, M. K. Sheinkman

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The symmetry of Yb³⁺-related luminescent centers in InP and In_1-xGa_xP layers with alloy composition less than x=0.13 is studied using polarized excitation spectroscopy. An induced polarized luminescence under above gap excitation is detected and is explained in terms of an excitation mechanism involving 4f→5d shell electron transitions. It is shown that the Yb³⁺-related centers responsible for 1.220-1.237 eV luminescence are optically anisotropic with C_3v symmetry or its subgroup. The effect of alloy composition on the symmetry of Yb centers is analyzed in terms of the Yb³⁺-Ga_In defect model.

Original language	English (US)
Pages (from-to)	1180-1183
Number of pages	4
Journal	Journal of Applied Physics
Volume	76
Issue number	2
DOIs	https://doi.org/10.1063/1.357843
State	Published - 1994

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General Physics and Astronomy

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title = "Symmetry of optically active Yb-related centers in InP and In 1-xGaxP (x≤0.13)",

abstract = "The symmetry of Yb3+-related luminescent centers in InP and In1-xGaxP layers with alloy composition less than x=0.13 is studied using polarized excitation spectroscopy. An induced polarized luminescence under above gap excitation is detected and is explained in terms of an excitation mechanism involving 4f→5d shell electron transitions. It is shown that the Yb3+-related centers responsible for 1.220-1.237 eV luminescence are optically anisotropic with C3v symmetry or its subgroup. The effect of alloy composition on the symmetry of Yb centers is analyzed in terms of the Yb3+-GaIn defect model.",

author = "Buyanova, {I. A.} and Neuhalfen, {A. J.} and Wessels, {B. W.} and Sheinkman, {M. K.}",

year = "1994",

doi = "10.1063/1.357843",

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journal = "Journal of Applied Physics",

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T1 - Symmetry of optically active Yb-related centers in InP and In 1-xGaxP (x≤0.13)

AU - Buyanova, I. A.

AU - Neuhalfen, A. J.

AU - Wessels, B. W.

AU - Sheinkman, M. K.

PY - 1994

Y1 - 1994

N2 - The symmetry of Yb3+-related luminescent centers in InP and In1-xGaxP layers with alloy composition less than x=0.13 is studied using polarized excitation spectroscopy. An induced polarized luminescence under above gap excitation is detected and is explained in terms of an excitation mechanism involving 4f→5d shell electron transitions. It is shown that the Yb3+-related centers responsible for 1.220-1.237 eV luminescence are optically anisotropic with C3v symmetry or its subgroup. The effect of alloy composition on the symmetry of Yb centers is analyzed in terms of the Yb3+-GaIn defect model.

AB - The symmetry of Yb3+-related luminescent centers in InP and In1-xGaxP layers with alloy composition less than x=0.13 is studied using polarized excitation spectroscopy. An induced polarized luminescence under above gap excitation is detected and is explained in terms of an excitation mechanism involving 4f→5d shell electron transitions. It is shown that the Yb3+-related centers responsible for 1.220-1.237 eV luminescence are optically anisotropic with C3v symmetry or its subgroup. The effect of alloy composition on the symmetry of Yb centers is analyzed in terms of the Yb3+-GaIn defect model.

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JF - Journal of Applied Physics

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ER -

Symmetry of optically active Yb-related centers in InP and In _1-xGa_xP (x≤0.13)

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