The symmetry of Yb3+-related luminescent centers in InP and In1-xGaxP layers with alloy composition less than x=0.13 is studied using polarized excitation spectroscopy. An induced polarized luminescence under above gap excitation is detected and is explained in terms of an excitation mechanism involving 4f→5d shell electron transitions. It is shown that the Yb3+-related centers responsible for 1.220-1.237 eV luminescence are optically anisotropic with C3v symmetry or its subgroup. The effect of alloy composition on the symmetry of Yb centers is analyzed in terms of the Yb3+-GaIn defect model.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Applied Physics|
|State||Published - 1994|
ASJC Scopus subject areas
- Physics and Astronomy(all)