Symmetry of optically active Yb-related centers in InP and In 1-xGaxP (x≤0.13)

I. A. Buyanova*, A. J. Neuhalfen, B. W. Wessels, M. K. Sheinkman

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The symmetry of Yb3+-related luminescent centers in InP and In1-xGaxP layers with alloy composition less than x=0.13 is studied using polarized excitation spectroscopy. An induced polarized luminescence under above gap excitation is detected and is explained in terms of an excitation mechanism involving 4f→5d shell electron transitions. It is shown that the Yb3+-related centers responsible for 1.220-1.237 eV luminescence are optically anisotropic with C3v symmetry or its subgroup. The effect of alloy composition on the symmetry of Yb centers is analyzed in terms of the Yb3+-GaIn defect model.

Original languageEnglish (US)
Pages (from-to)1180-1183
Number of pages4
JournalJournal of Applied Physics
Volume76
Issue number2
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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