Symmetry properties of Er3+ related centers in In 1-xGaxP with low alloy compositions

I. A. Buyanova*, A. J. Neuhalfen, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The symmetry properties of Er3+-related centers in InP and In1-xGaxP (x=0.08) epitaxial layers are determined using the method of polarized excitation spectroscopy. It is shown that the Er 3+-related luminescence is strongly polarized under polarized excitation. The polarization measurements indicate the low symmetry of these centers. Two transition mechanisms are proposed to explain the polarized luminescence. The first mechanism involves excitation of the intra-4f-shell electron into higher lying excited states of the Er3+ ion. A second mechanism involves the recombination of an exciton bound to an Er-related trap with a subsequent Auger excitation of the 4f shell.

Original languageEnglish (US)
Pages (from-to)2461-2463
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number20
DOIs
StatePublished - Dec 1 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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