Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture

Xinge Yu, Nanjia Zhou, Jeremy Smith, Hui Lin, Katie Stallings, Junsheng Yu, Tobin J. Marks*, Antonio Facchetti

*Corresponding author for this work

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 C are ∼5tmex larger (∼2.6 cm2/(V s)) than those of single-layer IGO TFTs (∼0.5 cm2/(V s)), reaching values comparable to single-layer combustion-processed In2O 3 TFTs (∼3.2 cm2/(V s)). More importantly, and unlike single-layer In2O3 TFTs, the threshold voltage of the bMO TFTs is ∼0.0 V, and the current on/off ratio is significantly enhanced to ∼1 × 108 (vs ∼1 × 104 for In 2O3). The microstructure and morphology of the In 2O3/IGO bilayers are analyzed by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy, revealing the polycrystalline nature of the In2O 3 layer and the amorphous nature of the IGO layer. This work demonstrates that solution-processed metal oxides can be implemented in bilayer TFT architectures with significantly enhanced performance.

Original languageEnglish (US)
Pages (from-to)7983-7988
Number of pages6
JournalACS Applied Materials and Interfaces
Volume5
Issue number16
DOIs
StatePublished - Aug 28 2013

Keywords

  • bilayer structure
  • indium gallium oxide
  • indium oxide
  • thin film transistor (TFT)

ASJC Scopus subject areas

  • Materials Science(all)

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