TY - JOUR
T1 - Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors
T2 - Interplay of Experiment and Theory
AU - Zhang, Xinan
AU - Wang, Binghao
AU - Huang, Wei
AU - Chen, Yao
AU - Wang, Gang
AU - Zeng, Li
AU - Zhu, Weigang
AU - Bedzyk, Michael J.
AU - Zhang, Weifeng
AU - Medvedeva, Julia E.
AU - Facchetti, Antonio
AU - Marks, Tobin J.
N1 - Funding Information:
We thank US-Israel Binational Science Foundation (BSF) (AGMT-2012250///02), ONR (MURI N00014-11-1-0690), the Northwestern U. MRSEC (NSF DMR-1720139), and Flexterra Corp. for support of this research. A. F. thanks the Shenzhen Peacock Plan project KQTD20140630110339343 for support. J.E.M. thanks the NSF-DMREF program (DMR- 1729779) and XSEDE (DMR-080007) for support. X.Z. thanks the China Scholarship Council for support, the National Natural Science Foundation of China (Grant No. U1504625) and the youth backbone teacher training program in He'nan province (Grant No. 2017GGJS021). This work made use of the J. B. Cohen X-ray Diffraction Facility, EPIC facility, Keck-II facility, and SPID facility of the NUANCE Center at Northwestern U., which received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205); the MRSEC program (NSF DMR-1720139) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN.
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/10/3
Y1 - 2018/10/3
N2 - We report the results of a study to enhance metal oxide (MO) thin-film transistor (TFT) performance by doping both the semiconductor (In2O3) and gate dielectric (Al2O3) layers with boron (yielding IBO and ABO, respectively) and provide the first quantitative analysis of how B doping affects charge transport in these MO dielectric and semiconducting matrices. The impact of 1-9 atom % B doping on MO microstructure, morphology, oxygen defects, charge transport, and dielectric properties is analyzed together, in detail, by complementary experimental (microstructural, electrical) and theoretical (ab initio MD, DFT) methods. The results indicate that B doping frustrates In2O3 crystallization while suppressing defects responsible for electron trapping and carrier generation. In the adjacent Al2O3 dielectric, B doping increases the dielectric constant and refractive index while reducing leakage currents. Furthermore, optimized solution-processed TFTs combining IBO channels with 6 atom % B and ABO dielectrics with 10 atom % B exhibit field effect mobilities as high as 11 cm2 V-1 s-1, current on/off ratios >105, threshold voltages = 0.6 V, and superior bias stress durability.
AB - We report the results of a study to enhance metal oxide (MO) thin-film transistor (TFT) performance by doping both the semiconductor (In2O3) and gate dielectric (Al2O3) layers with boron (yielding IBO and ABO, respectively) and provide the first quantitative analysis of how B doping affects charge transport in these MO dielectric and semiconducting matrices. The impact of 1-9 atom % B doping on MO microstructure, morphology, oxygen defects, charge transport, and dielectric properties is analyzed together, in detail, by complementary experimental (microstructural, electrical) and theoretical (ab initio MD, DFT) methods. The results indicate that B doping frustrates In2O3 crystallization while suppressing defects responsible for electron trapping and carrier generation. In the adjacent Al2O3 dielectric, B doping increases the dielectric constant and refractive index while reducing leakage currents. Furthermore, optimized solution-processed TFTs combining IBO channels with 6 atom % B and ABO dielectrics with 10 atom % B exhibit field effect mobilities as high as 11 cm2 V-1 s-1, current on/off ratios >105, threshold voltages = 0.6 V, and superior bias stress durability.
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U2 - 10.1021/jacs.8b06395
DO - 10.1021/jacs.8b06395
M3 - Article
C2 - 30183272
AN - SCOPUS:85053816278
VL - 140
SP - 12501
EP - 12510
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 39
ER -