Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors: Interplay of Experiment and Theory

INIS

• atoms 50%
• boron 33%
• carriers 16%
• charge transport 33%
• crystallization 16%
• defects 33%
• dielectric constant 16%
• dielectric properties 16%
• dielectrics 83%
• durability 16%
• electrons 16%
• layers 33%
• leakage current 16%
• matrices 16%
• metals 66%
• microstructure 33%
• mobility 16%
• morphology 16%
• oxides 66%
• oxygen 16%
• performance 33%
• refractive index 16%
• semiconductor materials 33%
• solutions 16%
• thin films 16%
• transistors 33%
• trapping 16%
• voltage 16%

Chemistry

• Aqueous Solution 16%
• Atom 50%
• Boron Atom 33%
• Compound Mobility 16%
• Crystallization 16%
• Density Functional Theory 16%
• Dielectric Constant 16%
• Dielectric Material 83%
• Dielectric Property 16%
• Dioxygen 16%
• Doping 100%
• Electron Particle 16%
• Field Effect 16%
• Leakage Current 16%
• Metal Oxide 66%
• Microstructure 16%
• Phase Composition 16%
• Refractive Index 16%
• Semiconductor 33%
• Transport Property 16%
• Voltage 16%

Material Science

• Al2O3 33%
• Crystallization 16%
• Defect 33%
• Dielectric Material 83%
• Durability 16%
• Microstructure 16%
• Morphology 16%
• Semiconductor Material 33%
• Solution 16%
• Thin-Film Transistor 16%
• Transistor 16%