Syntaxial growth of Ge/Mn-germanide nanowire heterostructures

Jessica L. Lensch-Falk, Eric R. Hemesath, Lincoln J. Lauhon

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


We report the growth of free-standing one-dimensional Ge/Mn-germanide nanowire heterostructures by chemical vapor deposition and provide a detailed description of the growth mechanism. Self-assembled manganese-germanide particles seed the growth of Ge nanowires (GeNWs) and simultaneously elongate along a parallel axis, resulting in syntaxial growth of the two phases. The GeNW growth is limited by GeH 4 decomposition, whereas the germanide growth is limited by reaction of Mn at the growth interface. This syntaxial growth mechanism provides a novel route to axial metal/semiconductor nanowire heterostructures.

Original languageEnglish (US)
Pages (from-to)2669-2673
Number of pages5
JournalNano letters
Issue number9
StatePublished - Sep 2008

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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