Syntheses, structures, and optical properties of the indium/germanium selenides Cs4In8GeSe16, CsInSe2, and CsInGeSe4

Matthew D. Ward; Eric A. Pozzi; Richard P. Van Duyne; James A. Ibers

doi:10.1016/j.jssc.2014.01.023

Syntheses, structures, and optical properties of the indium/germanium selenides Cs₄In₈GeSe₁₆, CsInSe₂, and CsInGeSe₄

Matthew D. Ward, Eric A. Pozzi, Richard P. Van Duyne, James A. Ibers^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The three solid-state indium/germanium selenides Cs₄In ₈GeSe₁₆, CsInSe₂, and CsInGeSe₄ have been synthesized at 1173 K. The structure of Cs₄In ₈GeSe₁₆ is a three-dimensional framework whereas those of CsInSe₂ and CsInGeSe₄ comprise sheets separated by Cs cations. Both Cs₄In₈GeSe₁₆ and CsInGeSe ₄ display In/Ge disorder. From optical absorption measurements these compounds have band gaps of 2.20 and 2.32 eV, respectively. All three compounds are charge balanced.

Original language	English (US)
Pages (from-to)	191-196
Number of pages	6
Journal	Journal of Solid State Chemistry
Volume	212
DOIs	https://doi.org/10.1016/j.jssc.2014.01.023
State	Published - Apr 2014

Keywords

Band gaps
Germanium
Indium
Selenides
Structures
Syntheses

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Physical and Theoretical Chemistry
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jssc.2014.01.023

Cite this

@article{d9b8e25887d3473ca3c506bbd7ff39e9,

title = "Syntheses, structures, and optical properties of the indium/germanium selenides Cs4In8GeSe16, CsInSe2, and CsInGeSe4",

abstract = "The three solid-state indium/germanium selenides Cs4In 8GeSe16, CsInSe2, and CsInGeSe4 have been synthesized at 1173 K. The structure of Cs4In 8GeSe16 is a three-dimensional framework whereas those of CsInSe2 and CsInGeSe4 comprise sheets separated by Cs cations. Both Cs4In8GeSe16 and CsInGeSe 4 display In/Ge disorder. From optical absorption measurements these compounds have band gaps of 2.20 and 2.32 eV, respectively. All three compounds are charge balanced.",

keywords = "Band gaps, Germanium, Indium, Selenides, Structures, Syntheses",

author = "Ward, {Matthew D.} and Pozzi, {Eric A.} and {Van Duyne}, {Richard P.} and Ibers, {James A.}",

note = "Funding Information: Funding for optical measurements was provided by the National Science Foundation Grant CHE-1152547 and the NSF MRSEC Grant DMR-1121262 . This material is based upon work supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1324585 . Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the National Science Foundation. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "2014",

month = apr,

doi = "10.1016/j.jssc.2014.01.023",

language = "English (US)",

volume = "212",

pages = "191--196",

journal = "Journal of Solid State Chemistry",

issn = "0022-4596",

publisher = "Academic Press Inc.",

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T1 - Syntheses, structures, and optical properties of the indium/germanium selenides Cs4In8GeSe16, CsInSe2, and CsInGeSe4

AU - Ward, Matthew D.

AU - Pozzi, Eric A.

AU - Van Duyne, Richard P.

AU - Ibers, James A.

N1 - Funding Information: Funding for optical measurements was provided by the National Science Foundation Grant CHE-1152547 and the NSF MRSEC Grant DMR-1121262 . This material is based upon work supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1324585 . Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the National Science Foundation. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 2014/4

Y1 - 2014/4

N2 - The three solid-state indium/germanium selenides Cs4In 8GeSe16, CsInSe2, and CsInGeSe4 have been synthesized at 1173 K. The structure of Cs4In 8GeSe16 is a three-dimensional framework whereas those of CsInSe2 and CsInGeSe4 comprise sheets separated by Cs cations. Both Cs4In8GeSe16 and CsInGeSe 4 display In/Ge disorder. From optical absorption measurements these compounds have band gaps of 2.20 and 2.32 eV, respectively. All three compounds are charge balanced.

AB - The three solid-state indium/germanium selenides Cs4In 8GeSe16, CsInSe2, and CsInGeSe4 have been synthesized at 1173 K. The structure of Cs4In 8GeSe16 is a three-dimensional framework whereas those of CsInSe2 and CsInGeSe4 comprise sheets separated by Cs cations. Both Cs4In8GeSe16 and CsInGeSe 4 display In/Ge disorder. From optical absorption measurements these compounds have band gaps of 2.20 and 2.32 eV, respectively. All three compounds are charge balanced.

KW - Band gaps

KW - Germanium

KW - Indium

KW - Selenides

KW - Structures

KW - Syntheses

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