Syntheses, structures, and optical properties of the indium/germanium selenides Cs4In8GeSe16, CsInSe2, and CsInGeSe4

Matthew D. Ward, Eric A. Pozzi, Richard P. Van Duyne, James A. Ibers*

*Corresponding author for this work

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

The three solid-state indium/germanium selenides Cs4In 8GeSe16, CsInSe2, and CsInGeSe4 have been synthesized at 1173 K. The structure of Cs4In 8GeSe16 is a three-dimensional framework whereas those of CsInSe2 and CsInGeSe4 comprise sheets separated by Cs cations. Both Cs4In8GeSe16 and CsInGeSe 4 display In/Ge disorder. From optical absorption measurements these compounds have band gaps of 2.20 and 2.32 eV, respectively. All three compounds are charge balanced.

Original languageEnglish (US)
Pages (from-to)191-196
Number of pages6
JournalJournal of Solid State Chemistry
Volume212
DOIs
StatePublished - Apr 1 2014

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Keywords

  • Band gaps
  • Germanium
  • Indium
  • Selenides
  • Structures
  • Syntheses

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry

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