Abstract
In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon powder and carbon black powder placed in a horizontal tube furnace were exposed to temperatures ranging from 1,250 to 1,500°C for 5-12 h in an argon atmosphere at atmospheric pressure. The resulting SiC nanoribbons were tens to hundreds of microns in length, a few microns in width and tens of nanometers in thickness. The nanoribbons were characterized with electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy, and were found to be hexagonal wurtzite-type SiC (2H-SiC) with a growth direction of 101̄0. The influence of the synthesis conditions such as the reaction temperature, reaction duration and chamber pressure on the growth of the SiC nanomaterial was investigated. A vapor-solid reaction dominated nanoribbon growth mechanism was discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1264-1271 |
| Number of pages | 8 |
| Journal | Nanoscale Research Letters |
| Volume | 5 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2010 |
Funding
Acknowledgments W. Ding appreciates the support of the start-up fund at Clarkson University. We are grateful to the Center for Advanced Materials Processing (CAMP) at Clarkson, the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University and the Nanosystem Engineering System Facility and Equipment Resources at West Virginia University for supplying multi-user facilities used in this work.
Keywords
- Hexagonal wurtzite
- Nanobelt
- Nanomaterial synthesis
- Nanoribbon
- Silicon carbide
ASJC Scopus subject areas
- Condensed Matter Physics
- General Materials Science