Synthesis and characterization of crystalline silicon carbide nanoribbons

Huan Zhang, Weiqiang Ding*, Kai He, Ming Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

82 Scopus citations

Abstract

In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon powder and carbon black powder placed in a horizontal tube furnace were exposed to temperatures ranging from 1,250 to 1,500°C for 5-12 h in an argon atmosphere at atmospheric pressure. The resulting SiC nanoribbons were tens to hundreds of microns in length, a few microns in width and tens of nanometers in thickness. The nanoribbons were characterized with electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy, and were found to be hexagonal wurtzite-type SiC (2H-SiC) with a growth direction of 101̄0. The influence of the synthesis conditions such as the reaction temperature, reaction duration and chamber pressure on the growth of the SiC nanomaterial was investigated. A vapor-solid reaction dominated nanoribbon growth mechanism was discussed.

Original languageEnglish (US)
Pages (from-to)1264-1271
Number of pages8
JournalNanoscale Research Letters
Volume5
Issue number8
DOIs
StatePublished - 2010

Keywords

  • Hexagonal wurtzite
  • Nanobelt
  • Nanomaterial synthesis
  • Nanoribbon
  • Silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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