Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasmas

D. Zhou; A. R. Krauss; L. C. Qin; T. G. McCauley; D. M. Gruen; T. D. Corrigan; R. P.H. Chang; H. Gnaser

doi:10.1063/1.366190

Synthesis and electron field emission of nanocrystalline diamond thin films grown from N₂/CH₄ microwave plasmas

D. Zhou^*, A. R. Krauss, L. C. Qin, T. G. McCauley, D. M. Gruen, T. D. Corrigan, R. P.H. Chang, H. Gnaser

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

199 Scopus citations

Abstract

Nanocrystalline diamond films have been synthesized by microwave plasma enhanced chemical vapor deposition using N₂/CH₄ as the reactant gas without additional H₂. The nanocrystalline diamond phase has been identified by x-ray diffraction and transmission electron microscopy analyses. High resolution secondary ion mass spectroscopy has been employed to measure incorporated nitrogen concentrations up to 8 ×10²⁰ atoms/cm³. Electron field emission measurements give an onset field as low as 3.2 V/μm. The effect of the incorporated nitrogen on the field emission characteristics of the nanocrystalline films is discussed.

Original language	English (US)
Pages (from-to)	4546-4550
Number of pages	5
Journal	Journal of Applied Physics
Volume	82
Issue number	9
DOIs	https://doi.org/10.1063/1.366190
State	Published - Nov 1 1997

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.366190

Cite this

@article{253c47451e4049768b7826b5f717886f,

title = "Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasmas",

abstract = "Nanocrystalline diamond films have been synthesized by microwave plasma enhanced chemical vapor deposition using N2/CH4 as the reactant gas without additional H2. The nanocrystalline diamond phase has been identified by x-ray diffraction and transmission electron microscopy analyses. High resolution secondary ion mass spectroscopy has been employed to measure incorporated nitrogen concentrations up to 8 ×1020 atoms/cm3. Electron field emission measurements give an onset field as low as 3.2 V/μm. The effect of the incorporated nitrogen on the field emission characteristics of the nanocrystalline films is discussed.",

author = "D. Zhou and Krauss, {A. R.} and Qin, {L. C.} and McCauley, {T. G.} and Gruen, {D. M.} and Corrigan, {T. D.} and Chang, {R. P.H.} and H. Gnaser",

year = "1997",

month = nov,

day = "1",

doi = "10.1063/1.366190",

language = "English (US)",

volume = "82",

pages = "4546--4550",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasmas

AU - Zhou, D.

AU - Krauss, A. R.

AU - Qin, L. C.

AU - McCauley, T. G.

AU - Gruen, D. M.

AU - Corrigan, T. D.

AU - Chang, R. P.H.

AU - Gnaser, H.

PY - 1997/11/1

Y1 - 1997/11/1

N2 - Nanocrystalline diamond films have been synthesized by microwave plasma enhanced chemical vapor deposition using N2/CH4 as the reactant gas without additional H2. The nanocrystalline diamond phase has been identified by x-ray diffraction and transmission electron microscopy analyses. High resolution secondary ion mass spectroscopy has been employed to measure incorporated nitrogen concentrations up to 8 ×1020 atoms/cm3. Electron field emission measurements give an onset field as low as 3.2 V/μm. The effect of the incorporated nitrogen on the field emission characteristics of the nanocrystalline films is discussed.

AB - Nanocrystalline diamond films have been synthesized by microwave plasma enhanced chemical vapor deposition using N2/CH4 as the reactant gas without additional H2. The nanocrystalline diamond phase has been identified by x-ray diffraction and transmission electron microscopy analyses. High resolution secondary ion mass spectroscopy has been employed to measure incorporated nitrogen concentrations up to 8 ×1020 atoms/cm3. Electron field emission measurements give an onset field as low as 3.2 V/μm. The effect of the incorporated nitrogen on the field emission characteristics of the nanocrystalline films is discussed.

UR - http://www.scopus.com/inward/record.url?scp=4143080398&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4143080398&partnerID=8YFLogxK

U2 - 10.1063/1.366190

DO - 10.1063/1.366190

M3 - Article

AN - SCOPUS:4143080398

SN - 0021-8979

VL - 82

SP - 4546

EP - 4550

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Synthesis and electron field emission of nanocrystalline diamond thin films grown from N₂/CH₄ microwave plasmas

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this