Synthesis of new pure ferromagnetic semiconductors: MnGeP2 and MnGeAs2

Sunglae Cho; Sungyoul Choi; Gi Beom Cha; Soon Cheol Hong; Yunki Kim; Arthur J. Freeman; John B. Ketterson; Yongsup Park; Hyun Min Park

doi:10.1016/j.ssc.2003.11.040

Synthesis of new pure ferromagnetic semiconductors: MnGeP₂ and MnGeAs₂

Sunglae Cho^*, Sungyoul Choi, Gi Beom Cha, Soon Cheol Hong, Yunki Kim, Arthur J. Freeman, John B. Ketterson, Yongsup Park, Hyun Min Park

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

We have synthesized two new chalcopyrite compounds: MnGeP₂ and MnGeAs₂. Total energy calculations predicted that both compounds are indirect semiconductors with band gaps of 0.24 and 0.06eV, respectively. Both compounds exhibit room-temperature ferromagnetism with T_C ∼ 320 and 340 K for MnGeP₂ and MnGeAs₂, respectively, based on magnetization and resistance measurements. We have also observed the anomalous Hall effect, indicating polarization of the carriers.

Original language	English (US)
Pages (from-to)	609-613
Number of pages	5
Journal	Solid State Communications
Volume	129
Issue number	9
DOIs	https://doi.org/10.1016/j.ssc.2003.11.040
State	Published - Mar 2004

Keywords

A. Semiconductor compounds
D. Spin polarized transport in semiconductors

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2003.11.040

Cite this

@article{c12980a02509440aa9bade3b91a32218,

title = "Synthesis of new pure ferromagnetic semiconductors: MnGeP2 and MnGeAs2",

abstract = "We have synthesized two new chalcopyrite compounds: MnGeP2 and MnGeAs2. Total energy calculations predicted that both compounds are indirect semiconductors with band gaps of 0.24 and 0.06eV, respectively. Both compounds exhibit room-temperature ferromagnetism with TC ∼ 320 and 340 K for MnGeP2 and MnGeAs2, respectively, based on magnetization and resistance measurements. We have also observed the anomalous Hall effect, indicating polarization of the carriers.",

keywords = "A. Semiconductor compounds, D. Spin polarized transport in semiconductors",

author = "Sunglae Cho and Sungyoul Choi and Cha, {Gi Beom} and Hong, {Soon Cheol} and Yunki Kim and Freeman, {Arthur J.} and Ketterson, {John B.} and Yongsup Park and Park, {Hyun Min}",

note = "Funding Information: We would like to acknowledge important conversations with Dr J.K. Furdyna during the early stages of this program. Research in South Korea was supported by KIST, KOSEF via the electron Spin Science Center at POSTECH, and KISTEP Grant # M1-0221-00-0002. Research at Northwestern was supported by the AFOSR Chalcopyrite MURI Grant #F49620-01-1-0428, DARPA Grant #N00014-02-1-0887, and National Science Foundation Grant # ECS-0224210.",

year = "2004",

month = mar,

doi = "10.1016/j.ssc.2003.11.040",

language = "English (US)",

volume = "129",

pages = "609--613",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "9",

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TY - JOUR

T1 - Synthesis of new pure ferromagnetic semiconductors

T2 - MnGeP2 and MnGeAs2

AU - Cho, Sunglae

AU - Choi, Sungyoul

AU - Cha, Gi Beom

AU - Hong, Soon Cheol

AU - Kim, Yunki

AU - Freeman, Arthur J.

AU - Ketterson, John B.

AU - Park, Yongsup

AU - Park, Hyun Min

N1 - Funding Information: We would like to acknowledge important conversations with Dr J.K. Furdyna during the early stages of this program. Research in South Korea was supported by KIST, KOSEF via the electron Spin Science Center at POSTECH, and KISTEP Grant # M1-0221-00-0002. Research at Northwestern was supported by the AFOSR Chalcopyrite MURI Grant #F49620-01-1-0428, DARPA Grant #N00014-02-1-0887, and National Science Foundation Grant # ECS-0224210.

PY - 2004/3

Y1 - 2004/3

N2 - We have synthesized two new chalcopyrite compounds: MnGeP2 and MnGeAs2. Total energy calculations predicted that both compounds are indirect semiconductors with band gaps of 0.24 and 0.06eV, respectively. Both compounds exhibit room-temperature ferromagnetism with TC ∼ 320 and 340 K for MnGeP2 and MnGeAs2, respectively, based on magnetization and resistance measurements. We have also observed the anomalous Hall effect, indicating polarization of the carriers.

AB - We have synthesized two new chalcopyrite compounds: MnGeP2 and MnGeAs2. Total energy calculations predicted that both compounds are indirect semiconductors with band gaps of 0.24 and 0.06eV, respectively. Both compounds exhibit room-temperature ferromagnetism with TC ∼ 320 and 340 K for MnGeP2 and MnGeAs2, respectively, based on magnetization and resistance measurements. We have also observed the anomalous Hall effect, indicating polarization of the carriers.

KW - A. Semiconductor compounds

KW - D. Spin polarized transport in semiconductors

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U2 - 10.1016/j.ssc.2003.11.040

DO - 10.1016/j.ssc.2003.11.040

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SN - 0038-1098

VL - 129

SP - 609

EP - 613

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -