Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe2Nanocrystals

Samantha M. Harvey, Daniel W. Houck, Wen Liu, Yuzi Liu, David J. Gosztola, Brian A. Korgel, Michael R. Wasielewski, Richard D. Schaller*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

CuInSe2 nanocrystals exhibit tunable near-infrared bandgaps that bolster utility in photovoltaic applications as well as offer potential as substitutes for more toxic Cd- and Pb-based semiconductor compositions. However, they can present a variety of defect states and unusual photophysics. Here, we examine the effects of ligand composition (oleylamine, diphenylphosphine, and tributylphosphine) on carrier dynamics in these materials. Via spectroscopic measurements such as photoluminescence and transient absorption, we find that ligands present during the synthesis of CuInSe2 nanocrystals impart nonradiative electronic states which compete with radiative recombination and give rise to low photoluminescence quantum yields. We characterize the nature of these defect states (hole vs electron traps) and investigate whether they exist at the surface or interior of the nanocrystals. Carrier lifetimes are highly dependent on ligand identity where oleylamine-capped nanocrystals exhibit rapid trapping (<20 ps) followed by diphenylphosphine (<500 ps) and finally tributylphosphine (>2 ns). A majority of carrier population localizes at indium copper antisites (electrons), copper vacancies (holes), or surface traps (electrons and/or holes), all of which are nonemissive.

Original languageEnglish (US)
Pages (from-to)19588-19599
Number of pages12
JournalACS nano
Volume15
Issue number12
DOIs
StatePublished - Dec 28 2021

Funding

S.M.H. gratefully acknowledges funding from the National Science Foundation Graduate Research Fellowship under Grant DGE-1842165. We acknowledge support of the National Science Foundation under MSN-1808950. This work was performed, in part, at the Center for Nanoscale Materials, a U.S. Department of Energy, Office of Science User Facilities, and supported by the U.S. Department of Energy, Office of Science, under Contract DE-AC02-06CH11357. This work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award DE-FG02-99ER14999 (M.R.W.). D.W.H., W.L., and B.A.K. acknowledge the Robert A Welch Foundation (F-1464), the Industry/University Cooperative Research Center on Next Generation Photovoltaics (IIP-1540028), and the Center for Dynamics and Control of Materials (CDCM) Materials Research Science and Engineering Center (MRSEC) (DMR-1720595). This work made use of the IMSERC NMR facility at Northwestern University, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), International Institute of Nanotechnology, and Northwestern University. The authors would like to thank B. Sponenburg for running the ICP-OES experiment. Metal analysis was performed at the Northwestern University Quantitative Bioelement Imaging Center.

Keywords

  • carrier dynamics
  • copper indium selenide
  • defects
  • ligands
  • semiconductor nanocrystals

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy

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