Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy

Yaxu Gu, Wanqi Jie*, Linglong Li, Yadong Xu, Yaodong Yang, Jie Ren, Gangqiang Zha, Tao Wang, Lingyan Xu, Yihui He, Shouzhi Xi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.

Original languageEnglish (US)
Pages (from-to)48-53
Number of pages6
JournalMicron
Volume88
DOIs
StatePublished - Sep 1 2016

Keywords

  • Bias dependent
  • CdZnTe
  • Electrical property
  • Kelvin probe force microscopy
  • Te inclusion

ASJC Scopus subject areas

  • Structural Biology
  • Materials Science(all)
  • Physics and Astronomy(all)
  • Cell Biology

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