Techniques for high-quality SiO2 films

J. Nguyen*, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


We report on the comparison of optical, structural, and electrical properties of SiO2 using plasma-enhanced chemical vapor deposition and ion-beam sputtering deposition. High-quality, low-temperature deposition of SiO2 by ion-beam sputtering deposition is shown to have lower absorption, smoother and more densely packed films, a lower amount of fixed oxide charges, and a lower trapped-interface density than SiO2 by plasma-enhanced chemical vapor deposition. This high-quality SiO2 is then demonstrated as an excellent electrical and mechanical surface passivation layer on Type-II InAs/GaSb photodetectors. The device performance improved by at least two orders of magnitude in surface resistivity, trap density, and zero-bias resistance-area product. The passivation layer also allows the device the ability to withstand the reflow and curing of underfill epoxy.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices IV
StatePublished - May 24 2007
EventQuantum Sensing and Nanophotonic Devices IV - San Jose, CA, United States
Duration: Jan 22 2007Jan 25 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherQuantum Sensing and Nanophotonic Devices IV
Country/TerritoryUnited States
CitySan Jose, CA


  • Ion-beam sputtering deposition
  • Silicon dioxide
  • Surface passivation
  • Type II photodetectors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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