Techniques for high-quality SiO2 films

J. Nguyen; Manijeh Razeghi

doi:10.1117/12.716608

Techniques for high-quality SiO₂ films

J. Nguyen^*, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We report on the comparison of optical, structural, and electrical properties of SiO₂ using plasma-enhanced chemical vapor deposition and ion-beam sputtering deposition. High-quality, low-temperature deposition of SiO₂ by ion-beam sputtering deposition is shown to have lower absorption, smoother and more densely packed films, a lower amount of fixed oxide charges, and a lower trapped-interface density than SiO₂ by plasma-enhanced chemical vapor deposition. This high-quality SiO₂ is then demonstrated as an excellent electrical and mechanical surface passivation layer on Type-II InAs/GaSb photodetectors. The device performance improved by at least two orders of magnitude in surface resistivity, trap density, and zero-bias resistance-area product. The passivation layer also allows the device the ability to withstand the reflow and curing of underfill epoxy.

Original language	English (US)
Title of host publication	Quantum Sensing and Nanophotonic Devices IV
DOIs	https://doi.org/10.1117/12.716608
State	Published - May 24 2007
Event	Quantum Sensing and Nanophotonic Devices IV - San Jose, CA, United States Duration: Jan 22 2007 → Jan 25 2007

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6479
ISSN (Print)	0277-786X

Other

Other	Quantum Sensing and Nanophotonic Devices IV
Country/Territory	United States
City	San Jose, CA
Period	1/22/07 → 1/25/07

Keywords

Ion-beam sputtering deposition
Silicon dioxide
Surface passivation
Type II photodetectors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.716608

Cite this

@inproceedings{a3d4d940f62e429cbce21cb4182835c6,

title = "Techniques for high-quality SiO2 films",

abstract = "We report on the comparison of optical, structural, and electrical properties of SiO2 using plasma-enhanced chemical vapor deposition and ion-beam sputtering deposition. High-quality, low-temperature deposition of SiO2 by ion-beam sputtering deposition is shown to have lower absorption, smoother and more densely packed films, a lower amount of fixed oxide charges, and a lower trapped-interface density than SiO2 by plasma-enhanced chemical vapor deposition. This high-quality SiO2 is then demonstrated as an excellent electrical and mechanical surface passivation layer on Type-II InAs/GaSb photodetectors. The device performance improved by at least two orders of magnitude in surface resistivity, trap density, and zero-bias resistance-area product. The passivation layer also allows the device the ability to withstand the reflow and curing of underfill epoxy.",

keywords = "Ion-beam sputtering deposition, Silicon dioxide, Surface passivation, Type II photodetectors",

author = "J. Nguyen and Manijeh Razeghi",

year = "2007",

month = may,

day = "24",

doi = "10.1117/12.716608",

language = "English (US)",

isbn = "0819465925",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Quantum Sensing and Nanophotonic Devices IV",

note = "Quantum Sensing and Nanophotonic Devices IV ; Conference date: 22-01-2007 Through 25-01-2007",

}

TY - GEN

T1 - Techniques for high-quality SiO2 films

AU - Nguyen, J.

AU - Razeghi, Manijeh

PY - 2007/5/24

Y1 - 2007/5/24

N2 - We report on the comparison of optical, structural, and electrical properties of SiO2 using plasma-enhanced chemical vapor deposition and ion-beam sputtering deposition. High-quality, low-temperature deposition of SiO2 by ion-beam sputtering deposition is shown to have lower absorption, smoother and more densely packed films, a lower amount of fixed oxide charges, and a lower trapped-interface density than SiO2 by plasma-enhanced chemical vapor deposition. This high-quality SiO2 is then demonstrated as an excellent electrical and mechanical surface passivation layer on Type-II InAs/GaSb photodetectors. The device performance improved by at least two orders of magnitude in surface resistivity, trap density, and zero-bias resistance-area product. The passivation layer also allows the device the ability to withstand the reflow and curing of underfill epoxy.

AB - We report on the comparison of optical, structural, and electrical properties of SiO2 using plasma-enhanced chemical vapor deposition and ion-beam sputtering deposition. High-quality, low-temperature deposition of SiO2 by ion-beam sputtering deposition is shown to have lower absorption, smoother and more densely packed films, a lower amount of fixed oxide charges, and a lower trapped-interface density than SiO2 by plasma-enhanced chemical vapor deposition. This high-quality SiO2 is then demonstrated as an excellent electrical and mechanical surface passivation layer on Type-II InAs/GaSb photodetectors. The device performance improved by at least two orders of magnitude in surface resistivity, trap density, and zero-bias resistance-area product. The passivation layer also allows the device the ability to withstand the reflow and curing of underfill epoxy.

KW - Ion-beam sputtering deposition

KW - Silicon dioxide

KW - Surface passivation

KW - Type II photodetectors

UR - http://www.scopus.com/inward/record.url?scp=34248666734&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248666734&partnerID=8YFLogxK

U2 - 10.1117/12.716608

DO - 10.1117/12.716608

M3 - Conference contribution

AN - SCOPUS:34248666734

SN - 0819465925

SN - 9780819465924

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Quantum Sensing and Nanophotonic Devices IV

T2 - Quantum Sensing and Nanophotonic Devices IV

Y2 - 22 January 2007 through 25 January 2007

ER -