Abstract
We report the first successful growth of Ga0.4.7In0.53As-InP superlattice by the low-pressure metalorganic chemical vapour deposition technique, and evidence for TEG properties in these structures.
Original language | English (US) |
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Pages (from-to) | 339-340 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 18 |
Issue number | 8 |
DOIs | |
State | Published - Apr 15 1982 |
Keywords
- Electron mobility
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering