TEG in LP-MO CVD Ga0.47In0.53As-InP superlattice

M. Razeghi, M. A. Poisson, J. P. Larivain, B. de Cremoux, J. P. Duchemin, M. Voos

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We report the first successful growth of Ga0.4.7In0.53As-InP superlattice by the low-pressure metalorganic chemical vapour deposition technique, and evidence for TEG properties in these structures.

Original languageEnglish (US)
Pages (from-to)339-340
Number of pages2
JournalElectronics Letters
Volume18
Issue number8
DOIs
StatePublished - Apr 15 1982

Keywords

  • Electron mobility
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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