Tellurium-free thermoelectric: The anisotropic n -type semiconductor Bi 2S 3

Kanishka Biswas; Li Dong Zhao; Mercouri G. Kanatzidis

doi:10.1002/aenm.201100775

Tellurium-free thermoelectric: The anisotropic n -type semiconductor Bi ₂S ₃

Kanishka Biswas, Li Dong Zhao, Mercouri G. Kanatzidis^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

225 Scopus citations

Original language	English (US)
Pages (from-to)	634-638
Number of pages	5
Journal	Advanced Energy Materials
Volume	2
Issue number	6
DOIs	https://doi.org/10.1002/aenm.201100775
State	Published - Jun 2012

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/aenm.201100775

Cite this

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title = "Tellurium-free thermoelectric: The anisotropic n -type semiconductor Bi 2S 3",

author = "Kanishka Biswas and Zhao, {Li Dong} and Kanatzidis, {Mercouri G.}",

year = "2012",

month = jun,

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pages = "634--638",

journal = "Advanced Energy Materials",

issn = "1614-6832",

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AU - Kanatzidis, Mercouri G.

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