Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways

Riley E. Brandt, Niall M Mangan, Jian V. Li, Rachel C. Kurchin, Timothy Milakovich, Sergiu Levcenco, Eugene A. Fitzgerald, Thomas Unold, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In novel photovoltaic absorbers, it is often difficult to assess the root causes of low open-circuit voltages, which may be due to bulk recombination or sub-optimal contacts. In the present work, we discuss the role of temperature- and illumination-dependent device electrical measurements in quantifying and distinguishing these per form ance losses - in particular, for determining bounds on interface recombination velocities, band alignment, and minority carrier lifetime. We assess the accuracy of this approach by direct comparison to photoelectron spectroscopy. Then, we demonstrate how more computationally intensive model parameter fitting approaches can draw more insights from this broad measurement space. We apply this measurement and modeling approach to high- performance III-V and thin-film chalcogenide devices.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-5
Number of pages5
ISBN (Electronic)9781509056057
DOIs
StatePublished - 2017
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Keywords

  • Characterization tools
  • Thin films

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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