TEMPERATURE AND MAGNETIC FIELD DEPENDENT THERMOELECTRIC POWER IN GaInAs-InP HETEROJUNCTIONS.

R. J. Nicholas*, T. H H Vuong, M. A. Brummell, J. C. Portal, M. Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

We report measurements of the thermoelectric power, S, of GaInAs-InP heterojunctions, as a function of temperature and magnetic field. For B equals O we find that S alpha 1/T below 10K, while at higher temperatures the thermopower passes through a minimum and then increases with temperature. In high magnetic fields strong oscillations of the thermopower are seen, with the same phase as the Shubnikov-deHaas oscillations in the resistivity. The thermopower at the peaks increases rapidly as the temperature is reduced, but is always less than the theoretical predictions.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
EditorsJames D. Chadi, Walter A. Harrison
PublisherSpringer Verlag
Pages389-392
Number of pages4
ISBN (Print)0387961089
StatePublished - Dec 1 1985

ASJC Scopus subject areas

  • Engineering(all)

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