Temperature dependence of minority-carrier lifetime in vapor-grown GaP

Bruce W. Wessels

doi:10.1063/1.321855

Temperature dependence of minority-carrier lifetime in vapor-grown GaP

Bruce W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Minority-carrier lifetimes in nitrogen-doped GaP grown by vapor phase epitaxy have been measured using the diode reverse-recovery technique. From the temperature dependence of the minority-carrier lifetime and utilizing the recombination model of Shockley, Read, and Hall, a recombination level at 0.15-0.19 eV was determined. The center, which is predominantly nonradiative, can be attributed to a donor-acceptor pair involving copper and an unknown donor.

Original language	English (US)
Pages (from-to)	2143-2146
Number of pages	4
Journal	Journal of Applied Physics
Volume	46
Issue number	5
DOIs	https://doi.org/10.1063/1.321855
State	Published - Dec 1 1975

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.321855

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title = "Temperature dependence of minority-carrier lifetime in vapor-grown GaP",

abstract = "Minority-carrier lifetimes in nitrogen-doped GaP grown by vapor phase epitaxy have been measured using the diode reverse-recovery technique. From the temperature dependence of the minority-carrier lifetime and utilizing the recombination model of Shockley, Read, and Hall, a recombination level at 0.15-0.19 eV was determined. The center, which is predominantly nonradiative, can be attributed to a donor-acceptor pair involving copper and an unknown donor.",

author = "Wessels, {Bruce W.}",

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N2 - Minority-carrier lifetimes in nitrogen-doped GaP grown by vapor phase epitaxy have been measured using the diode reverse-recovery technique. From the temperature dependence of the minority-carrier lifetime and utilizing the recombination model of Shockley, Read, and Hall, a recombination level at 0.15-0.19 eV was determined. The center, which is predominantly nonradiative, can be attributed to a donor-acceptor pair involving copper and an unknown donor.

AB - Minority-carrier lifetimes in nitrogen-doped GaP grown by vapor phase epitaxy have been measured using the diode reverse-recovery technique. From the temperature dependence of the minority-carrier lifetime and utilizing the recombination model of Shockley, Read, and Hall, a recombination level at 0.15-0.19 eV was determined. The center, which is predominantly nonradiative, can be attributed to a donor-acceptor pair involving copper and an unknown donor.

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Temperature dependence of minority-carrier lifetime in vapor-grown GaP

Abstract

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