Minority-carrier lifetimes in nitrogen-doped GaP grown by vapor phase epitaxy have been measured using the diode reverse-recovery technique. From the temperature dependence of the minority-carrier lifetime and utilizing the recombination model of Shockley, Read, and Hall, a recombination level at 0.15-0.19 eV was determined. The center, which is predominantly nonradiative, can be attributed to a donor-acceptor pair involving copper and an unknown donor.
ASJC Scopus subject areas
- Physics and Astronomy(all)