Temperature dependence of minority-carrier lifetime in vapor-grown GaP

Bruce W. Wessels*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Minority-carrier lifetimes in nitrogen-doped GaP grown by vapor phase epitaxy have been measured using the diode reverse-recovery technique. From the temperature dependence of the minority-carrier lifetime and utilizing the recombination model of Shockley, Read, and Hall, a recombination level at 0.15-0.19 eV was determined. The center, which is predominantly nonradiative, can be attributed to a donor-acceptor pair involving copper and an unknown donor.

Original languageEnglish (US)
Pages (from-to)2143-2146
Number of pages4
JournalJournal of Applied Physics
Volume46
Issue number5
DOIs
StatePublished - Dec 1 1975

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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