Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes

Melville P Ulmer, E. Cicek, Ryan P McClintock, Z. Vashaei, Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (Ea) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.

Original languageEnglish (US)
Title of host publicationHigh Energy, Optical, and Infrared Detectors for Astronomy V
Volume8453
DOIs
StatePublished - Dec 1 2012
EventHigh Energy, Optical, and Infrared Detectors for Astronomy V - Amsterdam, Netherlands
Duration: Jul 1 2012Jul 4 2012

Other

OtherHigh Energy, Optical, and Infrared Detectors for Astronomy V
CountryNetherlands
CityAmsterdam
Period7/1/127/4/12

Keywords

  • Avalanche photodiode
  • GaN
  • Single photon counting
  • Visible blind

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes'. Together they form a unique fingerprint.

Cite this