Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes

Melville P Ulmer; E. Cicek; Ryan P McClintock; Z. Vashaei; Manijeh Razeghi

doi:10.1117/12.924173

Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes

Melville P Ulmer, E. Cicek, Ryan P McClintock, Z. Vashaei, Manijeh Razeghi^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (E_a) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.

Original language	English (US)
Title of host publication	High Energy, Optical, and Infrared Detectors for Astronomy V
Volume	8453
DOIs	https://doi.org/10.1117/12.924173
State	Published - Dec 1 2012
Event	High Energy, Optical, and Infrared Detectors for Astronomy V - Amsterdam, Netherlands Duration: Jul 1 2012 → Jul 4 2012

Other

Other	High Energy, Optical, and Infrared Detectors for Astronomy V
Country/Territory	Netherlands
City	Amsterdam
Period	7/1/12 → 7/4/12

Keywords

Avalanche photodiode
GaN
Single photon counting
Visible blind

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.924173

Cite this

@inproceedings{24d73fd951f144bf84825c9710e3fc3d,

title = "Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes",

abstract = "We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (Ea) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.",

keywords = "Avalanche photodiode, GaN, Single photon counting, Visible blind",

author = "Ulmer, {Melville P} and E. Cicek and McClintock, {Ryan P} and Z. Vashaei and Manijeh Razeghi",

year = "2012",

month = dec,

day = "1",

doi = "10.1117/12.924173",

language = "English (US)",

isbn = "9780819491541",

volume = "8453",

booktitle = "High Energy, Optical, and Infrared Detectors for Astronomy V",

note = "High Energy, Optical, and Infrared Detectors for Astronomy V ; Conference date: 01-07-2012 Through 04-07-2012",

}

Ulmer, MP, Cicek, E, McClintock, RP, Vashaei, Z & Razeghi, M 2012, Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes. in High Energy, Optical, and Infrared Detectors for Astronomy V. vol. 8453, 84531G, High Energy, Optical, and Infrared Detectors for Astronomy V, Amsterdam, Netherlands, 7/1/12. https://doi.org/10.1117/12.924173

TY - GEN

T1 - Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes

AU - Ulmer, Melville P

AU - Cicek, E.

AU - McClintock, Ryan P

AU - Vashaei, Z.

AU - Razeghi, Manijeh

PY - 2012/12/1

Y1 - 2012/12/1

N2 - We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (Ea) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.

AB - We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (Ea) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.

KW - Avalanche photodiode

KW - GaN

KW - Single photon counting

KW - Visible blind

UR - http://www.scopus.com/inward/record.url?scp=84873358856&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873358856&partnerID=8YFLogxK

U2 - 10.1117/12.924173

DO - 10.1117/12.924173

M3 - Conference contribution

AN - SCOPUS:84873358856

SN - 9780819491541

VL - 8453

BT - High Energy, Optical, and Infrared Detectors for Astronomy V

T2 - High Energy, Optical, and Infrared Detectors for Astronomy V

Y2 - 1 July 2012 through 4 July 2012

ER -

Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes

Abstract

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this