Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes

Melville P Ulmer, E. Cicek, Ryan P McClintock, Z. Vashaei, Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (Ea) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.

Original languageEnglish (US)
Title of host publicationBiosensing and Nanomedicine V
DOIs
StatePublished - Dec 1 2012
EventBiosensing and Nanomedicine V - San Diego, CA, United States
Duration: Aug 12 2012Aug 15 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8460
ISSN (Print)0277-786X

Other

OtherBiosensing and Nanomedicine V
Country/TerritoryUnited States
CitySan Diego, CA
Period8/12/128/15/12

Keywords

  • Avalanche photodiode
  • GaN
  • Single photon counting
  • Visible blind

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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