Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes

M. P. Ulmer; E. Cicek; R. McClintock; Z. Vashaei; M. Razeghi

doi:10.1117/12.929138

Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes

M. P. Ulmer, E. Cicek, R. McClintock, Z. Vashaei, M. Razeghi^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (E_a) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.

Original language	English (US)
Title of host publication	Biosensing and Nanomedicine V
DOIs	https://doi.org/10.1117/12.929138
State	Published - 2012
Event	Biosensing and Nanomedicine V - San Diego, CA, United States Duration: Aug 12 2012 → Aug 15 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8460
ISSN (Print)	0277-786X

Other

Other	Biosensing and Nanomedicine V
Country/Territory	United States
City	San Diego, CA
Period	8/12/12 → 8/15/12

Keywords

Avalanche photodiode
GaN
Single photon counting
Visible blind

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.929138

Cite this

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title = "Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes",

abstract = "We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (Ea) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.",

keywords = "Avalanche photodiode, GaN, Single photon counting, Visible blind",

author = "Ulmer, {M. P.} and E. Cicek and R. McClintock and Z. Vashaei and M. Razeghi",

year = "2012",

doi = "10.1117/12.929138",

language = "English (US)",

isbn = "9780819491770",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Biosensing and Nanomedicine V",

note = "Biosensing and Nanomedicine V ; Conference date: 12-08-2012 Through 15-08-2012",

}

Ulmer, MP, Cicek, E, McClintock, R, Vashaei, Z & Razeghi, M 2012, Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes. in Biosensing and Nanomedicine V., 84601G, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8460, Biosensing and Nanomedicine V, San Diego, CA, United States, 8/12/12. https://doi.org/10.1117/12.929138

Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes. / Ulmer, M. P.; Cicek, E.; McClintock, R. et al.
Biosensing and Nanomedicine V. 2012. 84601G (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8460).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes

AU - Ulmer, M. P.

AU - Cicek, E.

AU - McClintock, R.

AU - Vashaei, Z.

AU - Razeghi, M.

PY - 2012

Y1 - 2012

N2 - We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (Ea) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.

AB - We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (Ea) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.

KW - Avalanche photodiode

KW - GaN

KW - Single photon counting

KW - Visible blind

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U2 - 10.1117/12.929138

DO - 10.1117/12.929138

M3 - Conference contribution

AN - SCOPUS:84872121369

SN - 9780819491770

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Biosensing and Nanomedicine V

T2 - Biosensing and Nanomedicine V

Y2 - 12 August 2012 through 15 August 2012

ER -

Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes

Abstract

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Keywords

ASJC Scopus subject areas

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