Temperature dependence of the quantized Hall effect

H. P. Wei; A. M. Chang; D. C. Tsui; M. Razeghi

doi:10.1103/PhysRevB.32.7016

Temperature dependence of the quantized Hall effect

H. P. Wei^*, A. M. Chang, D. C. Tsui, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

We reported detailed measurements of the temperature dependence of the quantized Hall effect from 4.2 to 50 K in the i=2 plateau region in InGaAs-InP. We deduce from the data that there is a significant density of localized states between the two Landau levels, with a value of 1×1010 cm-2 meV-1 at the middle of the mobility gap. We also found that the correlations between xx and xy show the trend predicted by the recent two-parameter scaling theory of localization in quantized Hall effect.

Original language	English (US)
Pages (from-to)	7016-7019
Number of pages	4
Journal	Physical Review B
Volume	32
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.32.7016
State	Published - 1985

ASJC Scopus subject areas

Condensed Matter Physics

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@article{510bfb33243f445fbab0a622544ecbf0,

title = "Temperature dependence of the quantized Hall effect",

abstract = "We reported detailed measurements of the temperature dependence of the quantized Hall effect from 4.2 to 50 K in the i=2 plateau region in InGaAs-InP. We deduce from the data that there is a significant density of localized states between the two Landau levels, with a value of 1×1010 cm-2 meV-1 at the middle of the mobility gap. We also found that the correlations between xx and xy show the trend predicted by the recent two-parameter scaling theory of localization in quantized Hall effect.",

author = "Wei, {H. P.} and Chang, {A. M.} and Tsui, {D. C.} and M. Razeghi",

year = "1985",

doi = "10.1103/PhysRevB.32.7016",

language = "English (US)",

volume = "32",

pages = "7016--7019",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Temperature dependence of the quantized Hall effect

AU - Wei, H. P.

AU - Chang, A. M.

AU - Tsui, D. C.

AU - Razeghi, M.

PY - 1985

Y1 - 1985

N2 - We reported detailed measurements of the temperature dependence of the quantized Hall effect from 4.2 to 50 K in the i=2 plateau region in InGaAs-InP. We deduce from the data that there is a significant density of localized states between the two Landau levels, with a value of 1×1010 cm-2 meV-1 at the middle of the mobility gap. We also found that the correlations between xx and xy show the trend predicted by the recent two-parameter scaling theory of localization in quantized Hall effect.

AB - We reported detailed measurements of the temperature dependence of the quantized Hall effect from 4.2 to 50 K in the i=2 plateau region in InGaAs-InP. We deduce from the data that there is a significant density of localized states between the two Landau levels, with a value of 1×1010 cm-2 meV-1 at the middle of the mobility gap. We also found that the correlations between xx and xy show the trend predicted by the recent two-parameter scaling theory of localization in quantized Hall effect.

UR - http://www.scopus.com/inward/record.url?scp=0000899359&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000899359&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.32.7016

DO - 10.1103/PhysRevB.32.7016

M3 - Article

AN - SCOPUS:0000899359

SN - 0163-1829

VL - 32

SP - 7016

EP - 7019

JO - Physical Review B

JF - Physical Review B

IS - 10

ER -

Temperature dependence of the quantized Hall effect

Abstract

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