Temperature dependence of the quantized Hall effect

H. P. Wei*, A. M. Chang, D. C. Tsui, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

We reported detailed measurements of the temperature dependence of the quantized Hall effect from 4.2 to 50 K in the i=2 plateau region in InGaAs-InP. We deduce from the data that there is a significant density of localized states between the two Landau levels, with a value of 1×1010 cm-2 meV-1 at the middle of the mobility gap. We also found that the correlations between xx and xy show the trend predicted by the recent two-parameter scaling theory of localization in quantized Hall effect.

Original languageEnglish (US)
Pages (from-to)7016-7019
Number of pages4
JournalPhysical Review B
Volume32
Issue number10
DOIs
StatePublished - Jan 1 1985

ASJC Scopus subject areas

  • Condensed Matter Physics

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