Temperature dependence of threshold current density Jth and differential efficiency ηd of high-power InGaAsP/GaAs (λ=0.8 μm) lasers

H. J. Yi*, J. Diaz, I. Eliashevich, M. Stanton, M. Erdtmann, X. He, L. J. Wang, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

An experimental and theoretical study on temperature dependence of the threshold current density Jth and differential efficiency ηd for the InGaAsP/GaAs laser diodes emitting at λ=0.8 μm was performed. Threshold current density Jth increases and differential efficiency ηd decreases as temperature is increased mainly because of thermal broadening of the gain spectrum. However, the measured temperature dependence of Jth and ηd could not be explained when only this effect was considered. In this letter, the temperature dependence of momentum relaxation rate /τ of carriers was investigated by performing the photoluminescence study. At high temperature, increase of the momentum relaxation rate /τ leads to reduction of the gain and mobility and increase of the optical loss, causing higher Jth and lower ηd as experimentally observed. The resulting theoretical model provides a good explanation for the mechanism of the increase of Jth and decrease of ηd.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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