Temperature dependence of threshold current density Jth and differential efficiency ηd of high-power InGaAsP/GaAs (λ=0.8 μm) lasers

H. J. Yi; J. Diaz; I. Eliashevich; M. Stanton; M. Erdtmann; X. He; L. J. Wang; M. Razeghi

doi:10.1063/1.114193

Temperature dependence of threshold current density J_th and differential efficiency η_d of high-power InGaAsP/GaAs (λ=0.8 μm) lasers

H. J. Yi^*, J. Diaz, I. Eliashevich, M. Stanton, M. Erdtmann, X. He, L. J. Wang, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

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Abstract

An experimental and theoretical study on temperature dependence of the threshold current density J_th and differential efficiency η_d for the InGaAsP/GaAs laser diodes emitting at λ=0.8 μm was performed. Threshold current density J_th increases and differential efficiency η_d decreases as temperature is increased mainly because of thermal broadening of the gain spectrum. However, the measured temperature dependence of J_th and η_d could not be explained when only this effect was considered. In this letter, the temperature dependence of momentum relaxation rate /τ of carriers was investigated by performing the photoluminescence study. At high temperature, increase of the momentum relaxation rate /τ leads to reduction of the gain and mobility and increase of the optical loss, causing higher J_th and lower η_d as experimentally observed. The resulting theoretical model provides a good explanation for the mechanism of the increase of J_th and decrease of η_d.

Original language	English (US)
Pages (from-to)	2460
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.114193
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{00771cf16db141b7bd61c9707fda4056,

title = "Temperature dependence of threshold current density Jth and differential efficiency ηd of high-power InGaAsP/GaAs (λ=0.8 μm) lasers",

abstract = "An experimental and theoretical study on temperature dependence of the threshold current density Jth and differential efficiency ηd for the InGaAsP/GaAs laser diodes emitting at λ=0.8 μm was performed. Threshold current density Jth increases and differential efficiency ηd decreases as temperature is increased mainly because of thermal broadening of the gain spectrum. However, the measured temperature dependence of Jth and ηd could not be explained when only this effect was considered. In this letter, the temperature dependence of momentum relaxation rate /τ of carriers was investigated by performing the photoluminescence study. At high temperature, increase of the momentum relaxation rate /τ leads to reduction of the gain and mobility and increase of the optical loss, causing higher Jth and lower ηd as experimentally observed. The resulting theoretical model provides a good explanation for the mechanism of the increase of Jth and decrease of ηd.",

author = "Yi, {H. J.} and J. Diaz and I. Eliashevich and M. Stanton and M. Erdtmann and X. He and Wang, {L. J.} and M. Razeghi",

year = "1995",

doi = "10.1063/1.114193",

language = "English (US)",

pages = "2460",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Temperature dependence of threshold current density Jth and differential efficiency ηd of high-power InGaAsP/GaAs (λ=0.8 μm) lasers

AU - Yi, H. J.

AU - Diaz, J.

AU - Eliashevich, I.

AU - Stanton, M.

AU - Erdtmann, M.

AU - He, X.

AU - Wang, L. J.

AU - Razeghi, M.

PY - 1995

Y1 - 1995

N2 - An experimental and theoretical study on temperature dependence of the threshold current density Jth and differential efficiency ηd for the InGaAsP/GaAs laser diodes emitting at λ=0.8 μm was performed. Threshold current density Jth increases and differential efficiency ηd decreases as temperature is increased mainly because of thermal broadening of the gain spectrum. However, the measured temperature dependence of Jth and ηd could not be explained when only this effect was considered. In this letter, the temperature dependence of momentum relaxation rate /τ of carriers was investigated by performing the photoluminescence study. At high temperature, increase of the momentum relaxation rate /τ leads to reduction of the gain and mobility and increase of the optical loss, causing higher Jth and lower ηd as experimentally observed. The resulting theoretical model provides a good explanation for the mechanism of the increase of Jth and decrease of ηd.

AB - An experimental and theoretical study on temperature dependence of the threshold current density Jth and differential efficiency ηd for the InGaAsP/GaAs laser diodes emitting at λ=0.8 μm was performed. Threshold current density Jth increases and differential efficiency ηd decreases as temperature is increased mainly because of thermal broadening of the gain spectrum. However, the measured temperature dependence of Jth and ηd could not be explained when only this effect was considered. In this letter, the temperature dependence of momentum relaxation rate /τ of carriers was investigated by performing the photoluminescence study. At high temperature, increase of the momentum relaxation rate /τ leads to reduction of the gain and mobility and increase of the optical loss, causing higher Jth and lower ηd as experimentally observed. The resulting theoretical model provides a good explanation for the mechanism of the increase of Jth and decrease of ηd.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Temperature dependence of threshold current density J_th and differential efficiency η_d of high-power InGaAsP/GaAs (λ=0.8 μm) lasers

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