Temperature dependence of threshold current density Jth and differential efficiency ηd of high-power InGaAsP/GaAs (λ=0.8 μm) lasers

H. J. Yi*, J. Diaz, I. Eliashevich, M. Stanton, M. Erdtmann, X. He, L. J. Wang, M. Razeghi

*Corresponding author for this work

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