Temperature dependent photoluminescence of single CdS nanowires

Thang Ba Hoang*, L. V. Titova, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, J. L. Lensch, L. J. Lauhon

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near band edge (NBE) PL and spatially localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from the nanowires follow closely the temperature dependent band edge, similar to that observed in bulk CdS.

Original languageEnglish (US)
Article number123123
JournalApplied Physics Letters
Volume89
Issue number12
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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