Temperature dependent photoluminescence of single CdS nanowires

Thang Ba Hoang; L. V. Titova; H. E. Jackson; L. M. Smith; J. M. Yarrison-Rice; J. L. Lensch; L. J. Lauhon

doi:10.1063/1.2357003

Temperature dependent photoluminescence of single CdS nanowires

Thang Ba Hoang^*, L. V. Titova, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, J. L. Lensch, L. J. Lauhon

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near band edge (NBE) PL and spatially localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from the nanowires follow closely the temperature dependent band edge, similar to that observed in bulk CdS.

Original language	English (US)
Article number	123123
Journal	Applied Physics Letters
Volume	89
Issue number	12
DOIs	https://doi.org/10.1063/1.2357003
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2357003

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title = "Temperature dependent photoluminescence of single CdS nanowires",

abstract = "Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near band edge (NBE) PL and spatially localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from the nanowires follow closely the temperature dependent band edge, similar to that observed in bulk CdS.",

author = "Hoang, {Thang Ba} and Titova, {L. V.} and Jackson, {H. E.} and Smith, {L. M.} and Yarrison-Rice, {J. M.} and Lensch, {J. L.} and Lauhon, {L. J.}",

note = "Funding Information: This work was supported by the National Science Foundation through Grant Nos. DMR 0071797 and 0216374, the Petroleum Research Fund of the American Chemical Society, University of Cincinnati, and Northwestern University. Another author (J.L.L.) acknowledges the support of a National Science Foundation Graduate Research Fellowship. ",

year = "2006",

doi = "10.1063/1.2357003",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Temperature dependent photoluminescence of single CdS nanowires

AU - Hoang, Thang Ba

AU - Titova, L. V.

AU - Jackson, H. E.

AU - Smith, L. M.

AU - Yarrison-Rice, J. M.

AU - Lensch, J. L.

AU - Lauhon, L. J.

N1 - Funding Information: This work was supported by the National Science Foundation through Grant Nos. DMR 0071797 and 0216374, the Petroleum Research Fund of the American Chemical Society, University of Cincinnati, and Northwestern University. Another author (J.L.L.) acknowledges the support of a National Science Foundation Graduate Research Fellowship.

PY - 2006

Y1 - 2006

N2 - Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near band edge (NBE) PL and spatially localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from the nanowires follow closely the temperature dependent band edge, similar to that observed in bulk CdS.

AB - Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near band edge (NBE) PL and spatially localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from the nanowires follow closely the temperature dependent band edge, similar to that observed in bulk CdS.

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