Temperature dependent photoluminescent properties of InAsxP 1-x/InP strained-layer quantum wells

D. R. Storch*, R. P. Schneider, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Thermal quenching of photoluminescence from InAsxP 1-x/InP strained-layer quantum wells has been investigated over the temperature range of 20-295 K. Structures with compositions of x=0.67 and x=1.0 and quantum well thicknesses of 1-17 monolayers were evaluated using Fourier transform photoluminescence spectroscopy. For InAs/InP heterostructures, the activation energy for thermal quenching depended on well thickness. Luminescence quenching was attributed to thermalization of free excitons from the well, and subsequent nonradiative recombination. Addition of phosphorus to the wells alters the recombination process responsible for luminescence quenching.

Original languageEnglish (US)
Pages (from-to)3041-3045
Number of pages5
JournalJournal of Applied Physics
Volume72
Issue number7
DOIs
StatePublished - 1992

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Temperature dependent photoluminescent properties of InAs<sub>x</sub>P <sub>1-x</sub>/InP strained-layer quantum wells'. Together they form a unique fingerprint.

Cite this