Temperature dependent photoluminescent properties of InAsxP 1-x/InP strained-layer quantum wells

D. R. Storch; R. P. Schneider; B. W. Wessels

doi:10.1063/1.351514

Temperature dependent photoluminescent properties of InAs_xP _1-x/InP strained-layer quantum wells

D. R. Storch^*, R. P. Schneider, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Thermal quenching of photoluminescence from InAs_xP _1-x/InP strained-layer quantum wells has been investigated over the temperature range of 20-295 K. Structures with compositions of x=0.67 and x=1.0 and quantum well thicknesses of 1-17 monolayers were evaluated using Fourier transform photoluminescence spectroscopy. For InAs/InP heterostructures, the activation energy for thermal quenching depended on well thickness. Luminescence quenching was attributed to thermalization of free excitons from the well, and subsequent nonradiative recombination. Addition of phosphorus to the wells alters the recombination process responsible for luminescence quenching.

Original language	English (US)
Pages (from-to)	3041-3045
Number of pages	5
Journal	Journal of Applied Physics
Volume	72
Issue number	7
DOIs	https://doi.org/10.1063/1.351514
State	Published - 1992

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{a937a610d59a4c4b83a5a130ac6fe9b1,

title = "Temperature dependent photoluminescent properties of InAsxP 1-x/InP strained-layer quantum wells",

abstract = "Thermal quenching of photoluminescence from InAsxP 1-x/InP strained-layer quantum wells has been investigated over the temperature range of 20-295 K. Structures with compositions of x=0.67 and x=1.0 and quantum well thicknesses of 1-17 monolayers were evaluated using Fourier transform photoluminescence spectroscopy. For InAs/InP heterostructures, the activation energy for thermal quenching depended on well thickness. Luminescence quenching was attributed to thermalization of free excitons from the well, and subsequent nonradiative recombination. Addition of phosphorus to the wells alters the recombination process responsible for luminescence quenching.",

author = "Storch, {D. R.} and Schneider, {R. P.} and Wessels, {B. W.}",

year = "1992",

doi = "10.1063/1.351514",

language = "English (US)",

volume = "72",

pages = "3041--3045",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Temperature dependent photoluminescent properties of InAsxP 1-x/InP strained-layer quantum wells

AU - Storch, D. R.

AU - Schneider, R. P.

AU - Wessels, B. W.

PY - 1992

Y1 - 1992

N2 - Thermal quenching of photoluminescence from InAsxP 1-x/InP strained-layer quantum wells has been investigated over the temperature range of 20-295 K. Structures with compositions of x=0.67 and x=1.0 and quantum well thicknesses of 1-17 monolayers were evaluated using Fourier transform photoluminescence spectroscopy. For InAs/InP heterostructures, the activation energy for thermal quenching depended on well thickness. Luminescence quenching was attributed to thermalization of free excitons from the well, and subsequent nonradiative recombination. Addition of phosphorus to the wells alters the recombination process responsible for luminescence quenching.

AB - Thermal quenching of photoluminescence from InAsxP 1-x/InP strained-layer quantum wells has been investigated over the temperature range of 20-295 K. Structures with compositions of x=0.67 and x=1.0 and quantum well thicknesses of 1-17 monolayers were evaluated using Fourier transform photoluminescence spectroscopy. For InAs/InP heterostructures, the activation energy for thermal quenching depended on well thickness. Luminescence quenching was attributed to thermalization of free excitons from the well, and subsequent nonradiative recombination. Addition of phosphorus to the wells alters the recombination process responsible for luminescence quenching.

UR - http://www.scopus.com/inward/record.url?scp=0001398091&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001398091&partnerID=8YFLogxK

U2 - 10.1063/1.351514

DO - 10.1063/1.351514

M3 - Article

AN - SCOPUS:0001398091

SN - 0021-8979

VL - 72

SP - 3041

EP - 3045

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Temperature dependent photoluminescent properties of InAs_xP _1-x/InP strained-layer quantum wells

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