Temperature dependent resistance of exchange biased spin valves with extremely thin IrMn

Nathaniel P. Stern*, Ariel E. Barton, Patricia D. Sparks, Matthew J. Carey, James C. Eckert

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The temperature dependent resistance of exchange biased spin valves with extremely thin IrMn was investigated. It was found that the magnitude of the difference between the resistance extrema depended upon the aspect ratio of the sample. The results showed that the temperatures at which the maxima and minima occur depended on the thickness of the IrMn layer.

Original languageEnglish (US)
JournalDigests of the Intermag Conference
StatePublished - Dec 1 2002
Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
Duration: Apr 28 2002May 2 2002

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Temperature dependent resistance of exchange biased spin valves with extremely thin IrMn'. Together they form a unique fingerprint.

Cite this