Temperature dependent resistance of exchange biased spin valves with extremely thin IrMn

N. P. Stern; A. E. Barton; P. D. Sparks; M. J. Carey; J. C. Eckert

doi:10.1109/INTMAG.2002.1001232

Temperature dependent resistance of exchange biased spin valves with extremely thin IrMn

N. P. Stern, A. E. Barton, P. D. Sparks, M. J. Carey, J. C. Eckert

Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The properties of IrMn spin valves with IrMn layer thicknesses ranging from 4 Å to 28 Å are explored at temperatures to 5 K. In particular, the temperature dependence of the resistance is investigated. The structure of the spin valves is: Si/50 Å Ti/40 Å NiFe/8 Å Co/30 Å Cu/30 Å Co/t_IrMn/50 Å Ti. The low temperature GMR is not greatly affected by the thickness of the IrMn. The thinner the IrMn, the lower the temperature at which the GMR is adversely affected. This is consistent with a reduction in the blocking temperature. A number of interesting features in the coercivity and field training are IrMn thickness dependent. The exchange field, coercive field, GMR and resistance each show characteristic temperatures. All of these and the blocking temperature depend on t_IrMn. Because the temperature dependence of the magnetic fields in these samples is so complicated we examine the directly measured resistance as a function of temperature.

Original language	English (US)
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1001232
State	Published - Jan 1 2002
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: Apr 28 2002 → May 2 2002

Other

Other	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Country/Territory	Netherlands
City	Amsterdam
Period	4/28/02 → 5/2/02

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

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10.1109/INTMAG.2002.1001232

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title = "Temperature dependent resistance of exchange biased spin valves with extremely thin IrMn",

abstract = "The properties of IrMn spin valves with IrMn layer thicknesses ranging from 4 {\AA} to 28 {\AA} are explored at temperatures to 5 K. In particular, the temperature dependence of the resistance is investigated. The structure of the spin valves is: Si/50 {\AA} Ti/40 {\AA} NiFe/8 {\AA} Co/30 {\AA} Cu/30 {\AA} Co/tIrMn/50 {\AA} Ti. The low temperature GMR is not greatly affected by the thickness of the IrMn. The thinner the IrMn, the lower the temperature at which the GMR is adversely affected. This is consistent with a reduction in the blocking temperature. A number of interesting features in the coercivity and field training are IrMn thickness dependent. The exchange field, coercive field, GMR and resistance each show characteristic temperatures. All of these and the blocking temperature depend on tIrMn. Because the temperature dependence of the magnetic fields in these samples is so complicated we examine the directly measured resistance as a function of temperature.",

author = "Stern, {N. P.} and Barton, {A. E.} and Sparks, {P. D.} and Carey, {M. J.} and Eckert, {J. C.}",

year = "2002",

month = jan,

day = "1",

doi = "10.1109/INTMAG.2002.1001232",

language = "English (US)",

booktitle = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 ; Conference date: 28-04-2002 Through 02-05-2002",

}

Stern, NP, Barton, AE, Sparks, PD, Carey, MJ & Eckert, JC 2002, Temperature dependent resistance of exchange biased spin valves with extremely thin IrMn. in INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1001232, Institute of Electrical and Electronics Engineers Inc., 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002, Amsterdam, Netherlands, 4/28/02. https://doi.org/10.1109/INTMAG.2002.1001232

TY - GEN

T1 - Temperature dependent resistance of exchange biased spin valves with extremely thin IrMn

AU - Stern, N. P.

AU - Barton, A. E.

AU - Sparks, P. D.

AU - Carey, M. J.

AU - Eckert, J. C.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The properties of IrMn spin valves with IrMn layer thicknesses ranging from 4 Å to 28 Å are explored at temperatures to 5 K. In particular, the temperature dependence of the resistance is investigated. The structure of the spin valves is: Si/50 Å Ti/40 Å NiFe/8 Å Co/30 Å Cu/30 Å Co/tIrMn/50 Å Ti. The low temperature GMR is not greatly affected by the thickness of the IrMn. The thinner the IrMn, the lower the temperature at which the GMR is adversely affected. This is consistent with a reduction in the blocking temperature. A number of interesting features in the coercivity and field training are IrMn thickness dependent. The exchange field, coercive field, GMR and resistance each show characteristic temperatures. All of these and the blocking temperature depend on tIrMn. Because the temperature dependence of the magnetic fields in these samples is so complicated we examine the directly measured resistance as a function of temperature.

AB - The properties of IrMn spin valves with IrMn layer thicknesses ranging from 4 Å to 28 Å are explored at temperatures to 5 K. In particular, the temperature dependence of the resistance is investigated. The structure of the spin valves is: Si/50 Å Ti/40 Å NiFe/8 Å Co/30 Å Cu/30 Å Co/tIrMn/50 Å Ti. The low temperature GMR is not greatly affected by the thickness of the IrMn. The thinner the IrMn, the lower the temperature at which the GMR is adversely affected. This is consistent with a reduction in the blocking temperature. A number of interesting features in the coercivity and field training are IrMn thickness dependent. The exchange field, coercive field, GMR and resistance each show characteristic temperatures. All of these and the blocking temperature depend on tIrMn. Because the temperature dependence of the magnetic fields in these samples is so complicated we examine the directly measured resistance as a function of temperature.

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DO - 10.1109/INTMAG.2002.1001232

M3 - Conference contribution

AN - SCOPUS:85017194166

BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002

Y2 - 28 April 2002 through 2 May 2002

ER -

Temperature dependent resistance of exchange biased spin valves with extremely thin IrMn

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