Abstract
In this work, we present our recent achievements for the reliability of the Al-free lasers at high temperatures and high powers. Laser operations up to 30,000 hours were achieved without any degradation in the lasers characteristics from 7 randomly selected InGaAsP/GaAs diodes for (lambda) equals 808 nm. The test were performed for lasers without mirror-coating for optical power of 0.5 to 1 W CW at 50 approximately 60 degree(s)C. To the best of our knowledge, this is the first direct demonstration of the extremely high reliability of Al-free diodes operations at high powers and temperatures for periods of time much longer than practical need (approximately 3 years). The characteristics during the tests are discussed in detail.
Original language | English (US) |
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Pages (from-to) | 243-253 |
Number of pages | 11 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3001 |
DOIs | |
State | Published - 1997 |
Event | In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared - San Jose, CA, United States Duration: Feb 10 1997 → Feb 10 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering