Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for λ = 808 and 980 nm

Manijeh Razeghi*, Hyuk J. Yi, Jacqueline E. Diaz, Seongsin Kim, Matthew Erdtmann

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

In this work, we present our recent achievements for the reliability of the Al-free lasers at high temperatures and high powers. Laser operations up to 30,000 hours were achieved without any degradation in the lasers characteristics from 7 randomly selected InGaAsP/GaAs diodes for (lambda) equals 808 nm. The test were performed for lasers without mirror-coating for optical power of 0.5 to 1 W CW at 50 approximately 60 degree(s)C. To the best of our knowledge, this is the first direct demonstration of the extremely high reliability of Al-free diodes operations at high powers and temperatures for periods of time much longer than practical need (approximately 3 years). The characteristics during the tests are discussed in detail.

Original languageEnglish (US)
Pages (from-to)243-253
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3001
DOIs
StatePublished - Dec 1 1997
EventIn-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared - San Jose, CA, United States
Duration: Feb 10 1997Feb 10 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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