Thallous chalcogenide (Tl 6I 4Se) for radiation detection at X-ray and γ-ray energies

Zhifu Liu; John A. Peters; Bruce W. Wessels; Simon Johnsen; Mercouri G. Kanatzidis

doi:10.1016/j.nima.2011.07.041

Thallous chalcogenide (Tl ₆I ₄Se) for radiation detection at X-ray and γ-ray energies

Zhifu Liu, John A. Peters, Bruce W. Wessels^*, Simon Johnsen, Mercouri G. Kanatzidis

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The optical and charge transport properties of the thallous chalcogenide compound Tl ₆I ₄Se were characterized. The semiconductor crystals are grown by the modified Bridgman method. We have measured the refractive index, and absorption coefficient of the compound ranging from 300 to 1500 nm by analysis of the UVvisnear IR transmission and reflection spectra. The band gap is 1.8 eV. For the evaluation of detector performance, the mobility-lifetime products for both the electron and hole carriers were measured. Tl ₆I ₄Se has mobility-lifetime products of 7.1×10 ^-3 and 5.9×10 ^-4 cm ²⁺/V for electron and hole carriers, respectively, which are comparable to those of Cd _0.9Zn _0.1Te. The γ-ray spectrum for a Tl ₆I ₄Se detector was measured. Its response to the 122 keV of ⁵⁷Co source is comparable to that of Cd _0.9Zn _0.1Te.

Original language	English (US)
Pages (from-to)	333-335
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	659
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2011.07.041
State	Published - Dec 11 2011

Funding

SJ would like to acknowledge funding from the Danish Research Council for Nature and Universe. This work is supported by the Department of Homeland Security with Grant 2010-DN-077-ARI042-02 . The device fabrication was performed in the microfabrication facility of the Materials Research Center at Northwestern University supported by the NSF under Grant DMR-0076097 . We would like to thank Dr. A. Schmidt of the Department of Physics and Astronomy, Northwestern University, and Prof. C. Zang for technical support.

Keywords

Photoconductivity
Tl-chalcogenide
Wide gap semiconductor
γ-ray detector

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nima.2011.07.041

Cite this

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title = "Thallous chalcogenide (Tl 6I 4Se) for radiation detection at X-ray and γ-ray energies",

abstract = "The optical and charge transport properties of the thallous chalcogenide compound Tl 6I 4Se were characterized. The semiconductor crystals are grown by the modified Bridgman method. We have measured the refractive index, and absorption coefficient of the compound ranging from 300 to 1500 nm by analysis of the UVvisnear IR transmission and reflection spectra. The band gap is 1.8 eV. For the evaluation of detector performance, the mobility-lifetime products for both the electron and hole carriers were measured. Tl 6I 4Se has mobility-lifetime products of 7.1×10 -3 and 5.9×10 -4 cm 2+/V for electron and hole carriers, respectively, which are comparable to those of Cd 0.9Zn 0.1Te. The γ-ray spectrum for a Tl 6I 4Se detector was measured. Its response to the 122 keV of 57Co source is comparable to that of Cd 0.9Zn 0.1Te.",

keywords = "Photoconductivity, Tl-chalcogenide, Wide gap semiconductor, γ-ray detector",

author = "Zhifu Liu and Peters, {John A.} and Wessels, {Bruce W.} and Simon Johnsen and Kanatzidis, {Mercouri G.}",

note = "Funding Information: SJ would like to acknowledge funding from the Danish Research Council for Nature and Universe. This work is supported by the Department of Homeland Security with Grant 2010-DN-077-ARI042-02 . The device fabrication was performed in the microfabrication facility of the Materials Research Center at Northwestern University supported by the NSF under Grant DMR-0076097 . We would like to thank Dr. A. Schmidt of the Department of Physics and Astronomy, Northwestern University, and Prof. C. Zang for technical support. ",

year = "2011",

month = dec,

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doi = "10.1016/j.nima.2011.07.041",

language = "English (US)",

volume = "659",

pages = "333--335",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

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Thallous chalcogenide (Tl ₆I ₄Se) for radiation detection at X-ray and γ-ray energies. / Liu, Zhifu; Peters, John A.; Wessels, Bruce W. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 659, No. 1, 11.12.2011, p. 333-335.

Research output: Contribution to journal › Article › peer-review

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AU - Liu, Zhifu

AU - Peters, John A.

AU - Wessels, Bruce W.

AU - Johnsen, Simon

AU - Kanatzidis, Mercouri G.

N1 - Funding Information: SJ would like to acknowledge funding from the Danish Research Council for Nature and Universe. This work is supported by the Department of Homeland Security with Grant 2010-DN-077-ARI042-02 . The device fabrication was performed in the microfabrication facility of the Materials Research Center at Northwestern University supported by the NSF under Grant DMR-0076097 . We would like to thank Dr. A. Schmidt of the Department of Physics and Astronomy, Northwestern University, and Prof. C. Zang for technical support.

PY - 2011/12/11

Y1 - 2011/12/11

N2 - The optical and charge transport properties of the thallous chalcogenide compound Tl 6I 4Se were characterized. The semiconductor crystals are grown by the modified Bridgman method. We have measured the refractive index, and absorption coefficient of the compound ranging from 300 to 1500 nm by analysis of the UVvisnear IR transmission and reflection spectra. The band gap is 1.8 eV. For the evaluation of detector performance, the mobility-lifetime products for both the electron and hole carriers were measured. Tl 6I 4Se has mobility-lifetime products of 7.1×10 -3 and 5.9×10 -4 cm 2+/V for electron and hole carriers, respectively, which are comparable to those of Cd 0.9Zn 0.1Te. The γ-ray spectrum for a Tl 6I 4Se detector was measured. Its response to the 122 keV of 57Co source is comparable to that of Cd 0.9Zn 0.1Te.

AB - The optical and charge transport properties of the thallous chalcogenide compound Tl 6I 4Se were characterized. The semiconductor crystals are grown by the modified Bridgman method. We have measured the refractive index, and absorption coefficient of the compound ranging from 300 to 1500 nm by analysis of the UVvisnear IR transmission and reflection spectra. The band gap is 1.8 eV. For the evaluation of detector performance, the mobility-lifetime products for both the electron and hole carriers were measured. Tl 6I 4Se has mobility-lifetime products of 7.1×10 -3 and 5.9×10 -4 cm 2+/V for electron and hole carriers, respectively, which are comparable to those of Cd 0.9Zn 0.1Te. The γ-ray spectrum for a Tl 6I 4Se detector was measured. Its response to the 122 keV of 57Co source is comparable to that of Cd 0.9Zn 0.1Te.

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