The complex capacitance of Si inversion layers in the quantized resistance regime

L. C. Zhao; B. B. Goldberg; D. A. Syphers; P. J. Stiles

doi:10.1016/0039-6028(84)90331-5

The complex capacitance of Si inversion layers in the quantized resistance regime

L. C. Zhao^*, B. B. Goldberg, D. A. Syphers, P. J. Stiles

^*Corresponding author for this work

Physics and Astronomy

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5 Scopus citations

Abstract

We report the results of an examination of the complex capacitance of Si inversion layers at low temperatures and kHz frequencies in the quantized resistance regime. We also discuss the results for the capacitance without a magnetic field and in a non-quantizing magnetic field. We find that the one-dimensional diffusion model as discussed by Stern is adequate for the discussion of the latter cases, but does not describe the quantizing case. A description is given which may be a basis for deriving the density of states and the contribution of both the localized and extended states.

Original language	English (US)
Pages (from-to)	332-338
Number of pages	7
Journal	Surface Science
Volume	142
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(84)90331-5
Publication status	Published - Jul 1 1984

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ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Cite this

Zhao, L. C., Goldberg, B. B., Syphers, D. A., & Stiles, P. J. (1984). The complex capacitance of Si inversion layers in the quantized resistance regime. Surface Science, 142(1-3), 332-338. https://doi.org/10.1016/0039-6028(84)90331-5

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N2 - We report the results of an examination of the complex capacitance of Si inversion layers at low temperatures and kHz frequencies in the quantized resistance regime. We also discuss the results for the capacitance without a magnetic field and in a non-quantizing magnetic field. We find that the one-dimensional diffusion model as discussed by Stern is adequate for the discussion of the latter cases, but does not describe the quantizing case. A description is given which may be a basis for deriving the density of states and the contribution of both the localized and extended states.

AB - We report the results of an examination of the complex capacitance of Si inversion layers at low temperatures and kHz frequencies in the quantized resistance regime. We also discuss the results for the capacitance without a magnetic field and in a non-quantizing magnetic field. We find that the one-dimensional diffusion model as discussed by Stern is adequate for the discussion of the latter cases, but does not describe the quantizing case. A description is given which may be a basis for deriving the density of states and the contribution of both the localized and extended states.

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10.1016/0039-6028(84)90331-5