The complex capacitance of Si inversion layers in the quantized resistance regime

L. C. Zhao*, B. B. Goldberg, D. A. Syphers, P. J. Stiles

*Corresponding author for this work

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Abstract

We report the results of an examination of the complex capacitance of Si inversion layers at low temperatures and kHz frequencies in the quantized resistance regime. We also discuss the results for the capacitance without a magnetic field and in a non-quantizing magnetic field. We find that the one-dimensional diffusion model as discussed by Stern is adequate for the discussion of the latter cases, but does not describe the quantizing case. A description is given which may be a basis for deriving the density of states and the contribution of both the localized and extended states.

Original languageEnglish (US)
Pages (from-to)332-338
Number of pages7
JournalSurface Science
Volume142
Issue number1-3
DOIs
Publication statusPublished - Jul 1 1984

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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