The complex capacitance of silicon inversion layers in strong inversion as a function of frequency and resistance

L. C. Zhao; D. A. Syphers; B. B. Goldberg; P. J. Stiles

doi:10.1016/0038-1098(84)90439-3

The complex capacitance of silicon inversion layers in strong inversion as a function of frequency and resistance

L. C. Zhao^*, D. A. Syphers, B. B. Goldberg, P. J. Stiles

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have examined the capacitance of Si inversion layers at kHz frequencies under strong inversion, low temperatures and modest magnetic fields. We find that the real and imaginary parts can be well described by a one dimensional diffusion equation providing that H is not too large.

Original language	English (US)
Pages (from-to)	859-861
Number of pages	3
Journal	Solid State Communications
Volume	49
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(84)90439-3
State	Published - Mar 1984

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(84)90439-3

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title = "The complex capacitance of silicon inversion layers in strong inversion as a function of frequency and resistance",

abstract = "We have examined the capacitance of Si inversion layers at kHz frequencies under strong inversion, low temperatures and modest magnetic fields. We find that the real and imaginary parts can be well described by a one dimensional diffusion equation providing that H is not too large.",

author = "Zhao, {L. C.} and Syphers, {D. A.} and Goldberg, {B. B.} and Stiles, {P. J.}",

note = "Funding Information: ACKNOWLEDGEME-N TW e wish to thank Dr. R. Wagner for long thin samples and Dr. Y Takeishi and Dr. Ii. Maeda of Toshiba Corp. for the short samples. We would also like to acknowledge R. Zeller for his help. This work was supported in part by NSF grant DMR8 113456.",

year = "1984",

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doi = "10.1016/0038-1098(84)90439-3",

language = "English (US)",

volume = "49",

pages = "859--861",

journal = "Solid State Communications",

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TY - JOUR

T1 - The complex capacitance of silicon inversion layers in strong inversion as a function of frequency and resistance

AU - Zhao, L. C.

AU - Syphers, D. A.

AU - Goldberg, B. B.

AU - Stiles, P. J.

N1 - Funding Information: ACKNOWLEDGEME-N TW e wish to thank Dr. R. Wagner for long thin samples and Dr. Y Takeishi and Dr. Ii. Maeda of Toshiba Corp. for the short samples. We would also like to acknowledge R. Zeller for his help. This work was supported in part by NSF grant DMR8 113456.

PY - 1984/3

Y1 - 1984/3

N2 - We have examined the capacitance of Si inversion layers at kHz frequencies under strong inversion, low temperatures and modest magnetic fields. We find that the real and imaginary parts can be well described by a one dimensional diffusion equation providing that H is not too large.

AB - We have examined the capacitance of Si inversion layers at kHz frequencies under strong inversion, low temperatures and modest magnetic fields. We find that the real and imaginary parts can be well described by a one dimensional diffusion equation providing that H is not too large.

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U2 - 10.1016/0038-1098(84)90439-3

DO - 10.1016/0038-1098(84)90439-3

M3 - Article

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SN - 0038-1098

VL - 49

SP - 859

EP - 861

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

The complex capacitance of silicon inversion layers in strong inversion as a function of frequency and resistance

Abstract

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