The complex capacitance of silicon inversion layers in strong inversion as a function of frequency and resistance

L. C. Zhao*, D. A. Syphers, B. B. Goldberg, P. J. Stiles

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We have examined the capacitance of Si inversion layers at kHz frequencies under strong inversion, low temperatures and modest magnetic fields. We find that the real and imaginary parts can be well described by a one dimensional diffusion equation providing that H is not too large.

Original languageEnglish (US)
Pages (from-to)859-861
Number of pages3
JournalSolid State Communications
Volume49
Issue number9
DOIs
StatePublished - Mar 1984

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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