Laser irradiation of Sb/Ge layered films has induced melting and interfacial mixing. The melting/mixing process nucleates at interfacial preferential sites, and follows a well-defined planar front when Sb is the upper layer. When Ge is uppermost, rippling of the film surface and mixed layers are observed.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics