The development of information storage materials - How microscopy can help?

A. K. Petford-Long*, X. Portier, P. Shang, A. Cerezo, D. J. Larson

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

The response of giant magnetoresistance (GMR) devices depends critically on the film microstructure, with parameters such as layer thickness and interracial abruptness being crucial. This paper presents results obtained using high resolution electron microscopy (HREM), chemical mapping and atom probe microanalysis. Local variations in the magnetic properties are induced by the microstructure and also when the films are patterned to form small elements. These lead to changes in the magnetization reversal mechanism. Some results of the studies of the magnetization reversal carried out using in situ in Lorentz transmission electron microscopy (LTEM) magnetizing experiments are also included.

Original languageEnglish (US)
Pages (from-to)1125-1129
Number of pages5
JournalPramana - Journal of Physics
Volume58
Issue number5-6
DOIs
StatePublished - Jan 1 2002
EventInternational Symposium on Advances in Superconductivity and Magnetism: Materials, Mechanisms and Devices - Mangalagangothri, India
Duration: Sep 25 2001Sep 28 2001

Keywords

  • Atom probe analysis
  • High resolution transmission electron microscopy
  • Information storage materials
  • Magnetic domains

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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