Abstract
The response of giant magnetoresistance (GMR) devices depends critically on the film microstructure, with parameters such as layer thickness and interracial abruptness being crucial. This paper presents results obtained using high resolution electron microscopy (HREM), chemical mapping and atom probe microanalysis. Local variations in the magnetic properties are induced by the microstructure and also when the films are patterned to form small elements. These lead to changes in the magnetization reversal mechanism. Some results of the studies of the magnetization reversal carried out using in situ in Lorentz transmission electron microscopy (LTEM) magnetizing experiments are also included.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1125-1129 |
| Number of pages | 5 |
| Journal | Pramana - Journal of Physics |
| Volume | 58 |
| Issue number | 5-6 |
| DOIs | |
| State | Published - Jan 1 2002 |
| Event | International Symposium on Advances in Superconductivity and Magnetism: Materials, Mechanisms and Devices - Mangalagangothri, India Duration: Sep 25 2001 → Sep 28 2001 |
Keywords
- Atom probe analysis
- High resolution transmission electron microscopy
- Information storage materials
- Magnetic domains
ASJC Scopus subject areas
- General Physics and Astronomy