Abstract
In this review article, an analysis of the recent developments of nitride-based photodetectors is reported. At the beginning, a brief introduction sketches the background of GaN and AlGaN material properties and addresses issues concerning their application in existing systems. Next, the theory behind the operation of each device is discussed, followed by significant achievements in the processing technology and progress made in understanding how defects in the material affect the devices. Finally, the overall performance of photoconductors, p-n junction devices and Schottky barrier devices made from GaN and AlGaN is described in detail.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 25-42 |
| Number of pages | 18 |
| Journal | Opto-electronics Review |
| Volume | 8 |
| Issue number | 1 |
| State | Published - 2000 |
Keywords
- High speed Schottky barrier devices
- Nitride-based photodetectors
- Solar-blind p-n junction devices
ASJC Scopus subject areas
- Radiation
- Materials Science(all)
- Electrical and Electronic Engineering