The development of nitride-based UV photodetectors

D. Walker*, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

20 Scopus citations

Abstract

In this review article, an analysis of the recent developments of nitride-based photodetectors is reported. At the beginning, a brief introduction sketches the background of GaN and AlGaN material properties and addresses issues concerning their application in existing systems. Next, the theory behind the operation of each device is discussed, followed by significant achievements in the processing technology and progress made in understanding how defects in the material affect the devices. Finally, the overall performance of photoconductors, p-n junction devices and Schottky barrier devices made from GaN and AlGaN is described in detail.

Original languageEnglish (US)
Pages (from-to)25-42
Number of pages18
JournalOpto-electronics Review
Volume8
Issue number1
StatePublished - Jan 1 2000

Keywords

  • High speed Schottky barrier devices
  • Nitride-based photodetectors
  • Solar-blind p-n junction devices

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Electrical and Electronic Engineering

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