The effect of doping the M -barrier in very long-wave type-II InAsGaSb heterodiodes

Darin Hoffman; Binh Minh Nguyen; Edward Kwei Wei Huang; Pierre Yves Delaunay; Manijeh Razeghi; Meimei Z. Tidrow; Joe Pellegrino

doi:10.1063/1.2963980

The effect of doping the M -barrier in very long-wave type-II InAsGaSb heterodiodes

Darin Hoffman^*, Binh Minh Nguyen, Edward Kwei Wei Huang, Pierre Yves Delaunay, Manijeh Razeghi, Meimei Z. Tidrow, Joe Pellegrino

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

A variation on the standard homodiode type-II superlattice with an M -barrier between the π -region and the n -region is shown to suppress the dark currents. By determining the optimal doping level of the M -superlattice, dark current densities of 4.95 mA cm2 and quantum efficiencies in excess of 20% have been demonstrated at the moderate reverse bias of 50 mV; allowing for near background-limted performance with a Johnson-noise detectivity of 3.11× 1010 cm HzW at 77 K for 14.58 μm cutoff wavelength for large area diodes without passivation. This is comparable to values for the state-of-the-art HgCdTe photodiodes.

Original language	English (US)
Article number	031107
Journal	Applied Physics Letters
Volume	93
Issue number	3
DOIs	https://doi.org/10.1063/1.2963980
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "The effect of doping the M -barrier in very long-wave type-II InAsGaSb heterodiodes",

abstract = "A variation on the standard homodiode type-II superlattice with an M -barrier between the π -region and the n -region is shown to suppress the dark currents. By determining the optimal doping level of the M -superlattice, dark current densities of 4.95 mA cm2 and quantum efficiencies in excess of 20% have been demonstrated at the moderate reverse bias of 50 mV; allowing for near background-limted performance with a Johnson-noise detectivity of 3.11× 1010 cm HzW at 77 K for 14.58 μm cutoff wavelength for large area diodes without passivation. This is comparable to values for the state-of-the-art HgCdTe photodiodes.",

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T1 - The effect of doping the M -barrier in very long-wave type-II InAsGaSb heterodiodes

AU - Hoffman, Darin

AU - Nguyen, Binh Minh

AU - Huang, Edward Kwei Wei

AU - Delaunay, Pierre Yves

AU - Razeghi, Manijeh

AU - Tidrow, Meimei Z.

AU - Pellegrino, Joe

PY - 2008

Y1 - 2008

N2 - A variation on the standard homodiode type-II superlattice with an M -barrier between the π -region and the n -region is shown to suppress the dark currents. By determining the optimal doping level of the M -superlattice, dark current densities of 4.95 mA cm2 and quantum efficiencies in excess of 20% have been demonstrated at the moderate reverse bias of 50 mV; allowing for near background-limted performance with a Johnson-noise detectivity of 3.11× 1010 cm HzW at 77 K for 14.58 μm cutoff wavelength for large area diodes without passivation. This is comparable to values for the state-of-the-art HgCdTe photodiodes.

AB - A variation on the standard homodiode type-II superlattice with an M -barrier between the π -region and the n -region is shown to suppress the dark currents. By determining the optimal doping level of the M -superlattice, dark current densities of 4.95 mA cm2 and quantum efficiencies in excess of 20% have been demonstrated at the moderate reverse bias of 50 mV; allowing for near background-limted performance with a Johnson-noise detectivity of 3.11× 1010 cm HzW at 77 K for 14.58 μm cutoff wavelength for large area diodes without passivation. This is comparable to values for the state-of-the-art HgCdTe photodiodes.

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The effect of doping the M -barrier in very long-wave type-II InAsGaSb heterodiodes

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