The effect of doping the M -barrier in very long-wave type-II InAsGaSb heterodiodes

Darin Hoffman*, Binh Minh Nguyen, Edward Kwei Wei Huang, Pierre Yves Delaunay, Manijeh Razeghi, Meimei Z. Tidrow, Joe Pellegrino

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

A variation on the standard homodiode type-II superlattice with an M -barrier between the π -region and the n -region is shown to suppress the dark currents. By determining the optimal doping level of the M -superlattice, dark current densities of 4.95 mA cm2 and quantum efficiencies in excess of 20% have been demonstrated at the moderate reverse bias of 50 mV; allowing for near background-limted performance with a Johnson-noise detectivity of 3.11× 1010 cm HzW at 77 K for 14.58 μm cutoff wavelength for large area diodes without passivation. This is comparable to values for the state-of-the-art HgCdTe photodiodes.

Original languageEnglish (US)
Article number031107
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
StatePublished - Aug 4 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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