The effect of hydrostatic pressure on a Ga0.47In 0.53As/InP heterojunction with three electric sub-bands

D. Gauthier*, L. Dmowski, S. Ben Amor, R. Blondel, J. C. Portal, M. Razeghi, P. Maurel, F. Omnes, M. Laviron

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The authors report the first experiment under hydrostatic pressure for the GaInAs/InP heterojunction with three electric sub-bands populated. The total population decreases from 6.04*1011 cm-2 to 5.09*1011 cm-2 (16%) for pressures up to 15 kbar. Although this change is bigger than the population of the third sub-band it was found to be populated even for the highest pressure applied. This observation, as well as the decrease of the gaps in energy between the electric sub-bands, proves the action of a hydrostatic pressure upon the positions of the electric sub-bands in the quantum well. A study in parallel magnetic fields allows one to work out the value of the ( Delta Z0)2-( Delta Z 1)2 difference in the spread of the wavefunction of the ground and first excited sub-bands. The increase of this value with pressure proves a broadening of the quantum well. A fall of the Hall mobility of 2% kbar-1 is observed, while the increase of effective mass with pressure is only 1+or-0.1% kbar-1 for this sample and the contribution of inter-sub-band scattering has been found to decrease with pressure.

Original languageEnglish (US)
Article number001
Pages (from-to)105-109
Number of pages5
JournalSemiconductor Science and Technology
Volume1
Issue number2
DOIs
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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