The authors report the first experiment under hydrostatic pressure for the GaInAs/InP heterojunction with three electric sub-bands populated. The total population decreases from 6.04*1011 cm-2 to 5.09*1011 cm-2 (16%) for pressures up to 15 kbar. Although this change is bigger than the population of the third sub-band it was found to be populated even for the highest pressure applied. This observation, as well as the decrease of the gaps in energy between the electric sub-bands, proves the action of a hydrostatic pressure upon the positions of the electric sub-bands in the quantum well. A study in parallel magnetic fields allows one to work out the value of the ( Delta Z0)2-( Delta Z 1)2 difference in the spread of the wavefunction of the ground and first excited sub-bands. The increase of this value with pressure proves a broadening of the quantum well. A fall of the Hall mobility of 2% kbar-1 is observed, while the increase of effective mass with pressure is only 1+or-0.1% kbar-1 for this sample and the contribution of inter-sub-band scattering has been found to decrease with pressure.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry