The effect of interface arsenic domains on the electrical properties of GaAs MOS structures

R. P H Chang; T. T. Sheng; C. C. Chang; J. J. Coleman

doi:10.1063/1.90329

The effect of interface arsenic domains on the electrical properties of GaAs MOS structures

R. P H Chang^*, T. T. Sheng, C. C. Chang, J. J. Coleman

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Postgrowth annealing of plasma grown GaAs oxides in N₂ and H₂ result in very different electrical behaviors. By examining cross-sectioned specimens of these oxides with transmission electron microscopy, and correlating the observed structure with electrical measurements, it is demonstrated that metallic As at the oxide-semiconductor interface plays a significant role in determining the MOS characteristics.

Original language	English (US)
Pages (from-to)	341-342
Number of pages	2
Journal	Applied Physics Letters
Volume	33
Issue number	4
DOIs	https://doi.org/10.1063/1.90329
State	Published - 1978

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{a666527552f34817a102d945beea0c15,

title = "The effect of interface arsenic domains on the electrical properties of GaAs MOS structures",

abstract = "Postgrowth annealing of plasma grown GaAs oxides in N2 and H2 result in very different electrical behaviors. By examining cross-sectioned specimens of these oxides with transmission electron microscopy, and correlating the observed structure with electrical measurements, it is demonstrated that metallic As at the oxide-semiconductor interface plays a significant role in determining the MOS characteristics.",

author = "Chang, {R. P H} and Sheng, {T. T.} and Chang, {C. C.} and Coleman, {J. J.}",

year = "1978",

doi = "10.1063/1.90329",

language = "English (US)",

volume = "33",

pages = "341--342",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

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T1 - The effect of interface arsenic domains on the electrical properties of GaAs MOS structures

AU - Chang, R. P H

AU - Sheng, T. T.

AU - Chang, C. C.

AU - Coleman, J. J.

PY - 1978

Y1 - 1978

N2 - Postgrowth annealing of plasma grown GaAs oxides in N2 and H2 result in very different electrical behaviors. By examining cross-sectioned specimens of these oxides with transmission electron microscopy, and correlating the observed structure with electrical measurements, it is demonstrated that metallic As at the oxide-semiconductor interface plays a significant role in determining the MOS characteristics.

AB - Postgrowth annealing of plasma grown GaAs oxides in N2 and H2 result in very different electrical behaviors. By examining cross-sectioned specimens of these oxides with transmission electron microscopy, and correlating the observed structure with electrical measurements, it is demonstrated that metallic As at the oxide-semiconductor interface plays a significant role in determining the MOS characteristics.

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U2 - 10.1063/1.90329

DO - 10.1063/1.90329

M3 - Article

AN - SCOPUS:34250653086

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VL - 33

SP - 341

EP - 342

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

The effect of interface arsenic domains on the electrical properties of GaAs MOS structures

Abstract

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